k4j55323qf-gc Samsung Semiconductor, Inc., k4j55323qf-gc Datasheet - Page 43

• Manufacturer Part Number: k4j55323qf-gc
• Description: 256mbit Gddr3 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

K4J55323QF-GC
3. Current state definitions :
4. AUTO REFRESH and LOAD MODE REGISTER commands may only be issued when all banks are idle.
5. All states and sequences not shown are illegal or reserved.
6. READs or WRITEs listed in the Command/Action column include READs or WRITEs with auto precharge enabled and
7. Requires appropriate DM masking.
8. Except data termination disable
3a. The read with auto precharge enabled or write with auto precharge enabled states can each be broken into two
3b. The minimum delay from a READ or WRITE command with auto precharge enabled, to a command to a different
READs or WRITEs with auto precharge disabled.
Precharge Enabled
Precharge Enabled
From Command
bank is summarized below.
During the precharge period of the read with auto precharge enabled or write with auto precharge enabled states,
parts : the access period and the precharge period. For read with auto precharge, the precharge period is defined
as if the same burst was executed with auto precharge disabled and then followed with the earliest possible PRE-
CHARGE command that still accesses all of the data in the burst. For write with auto precharge, the precharge
period begins when tWR ends, with tWR command and ends where the precharge period (or t
ACTIVE, PRECHARGE, READ and WRITE commands to the other bank may be applied. In either case, all other
related Limitations apply (e.g., contention between read data write data must be avoided).
WRITE w/AP
READ w/AP
Read w/ Auto- : See following text
Write w/ Auto- : See following text
Row Active : A row in the bank has been activated, and t
Read : A READ burst has been initiated, with auto precharge disabled.
Write : A WRITE burst has been initiated, with auto precharge disabled.
Idle : The bank has been precharged, and t
No data bursts/accesses and no register accesses are in progress.
READ or READ w/AP
WRITE or WRITE w/AP
PRECHARGE
ACTIVE
READ or READ w/AP
WRITE or WRITE w/AP
PRECHARGE
ACTIVE
To Command
- 43 -
RP
Minimum delay (with concurrent auto precharge)
has been met.
RCD
has been met.
[CL
[WL + (BL/2)] tCK + tCDLR
RU
+ (BL/2)] + 1 - WL * tCK
256M GDDR3 SDRAM
(BL/2) * tCK
(BL/2) * tCK
1 tCK
1 tCK
1 tCK
1 tCK
Rev 1.7 (Jan. 2005)
RP
) begins.