k4j55323qf-gc Samsung Semiconductor, Inc., k4j55323qf-gc Datasheet - Page 48

• Manufacturer Part Number: k4j55323qf-gc
• Description: 256mbit Gddr3 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

AC CHARACTERISTICS - II
K4J55323QF-GC
Row active time
Row cycle time
Refresh row cycle time
RAS to CAS delay for Read
RAS to CAS delay for Write
Row precharge time
Row active to Row active
Last data in to Row precharge @ Normal pre-
charge
Last data in to Row precharge @ Auto precharge t
Last data in to Read command
Mode register set cycle time
Auto precharge write recovery time + Precharge t
Exit self refresh to Read command
Power-down exit time
Refresh interval time
Parameter
t
t
t
t
t
t
t
t
t
t
t
t
t
Symbol
RAS
RC
RFC
RCDR
RCDW
RP
RRD
WR
WR_A
CDLR
MRD
DAL
XSR
PDEX
REF
20000
6tCK
+tIS
Min
22
31
39
10
18
6
9
8
9
7
5
6
-
-14
100K
Max
- 48 -
7.8
-
-
-
-
-
-
-
-
-
-
-
-
20000
6tCK
Min
+tIS
22
31
39
10
18
6
9
8
9
7
5
6
-
-15
100K
Max
7.8
-
-
-
-
-
-
-
-
-
-
-
-
20000
6tCK
Min
+tIS
27
33
16
19
9
5
8
7
8
7
4
5
-
256M GDDR3 SDRAM
-16
100K
Max
7.8
-
-
-
-
-
-
-
-
-
-
-
-
20000
4tCK
Min
+tIS
15
21
27
13
Rev 1.7 (Jan. 2005)
7
4
6
5
7
7
3
4
-
-20
100K
Max
7.8
-
-
-
-
-
-
-
-
-
-
-
-
Unit
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
us
Note