IRHLG73110 IRF [International Rectifier], IRHLG73110 Datasheet
IRHLG73110
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IRHLG73110 Summary of contents
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... RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-036AB) Product Summary Part Number Radiation Level R IRHLG77110 100K Rads (Si) IRHLG73110 300K Rads (Si) International Rectifier’s R7 Logic Level Power TM MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The ...
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IRHLG77110, 2N7612M1 Electrical Characteristics For Each N-Channel Device Parameter BV DSS Drain-to-Source Breakdown Voltage ∆BV DSS /∆T J Temperature Coefficient of Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance V GS(th) Gate Threshold Voltage ∆V GS(th) /∆T J Gate Threshold ...
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... V Diode Forward Voltage SD 1. Part numbers IRHLG77110, IRHLG73110 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Typical Single Event Effect Safe Operating Area (Per Die) ...
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IRHLG77110, 2N7612M1 10 1 2.0V 60µs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 150° 25° 50V ...
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Pre-Irradiation 0.5 0.4 0.3 0.2 0 GS, Gate -to -Source Voltage (V) Fig 5. Typical On-Resistance Vs Gate Voltage 130 1.0mA 120 110 100 -60 -40 - ...
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IRHLG77110, 2N7612M1 1600 0V MHz C iss = SHORTED 1400 C rss = oss = 1200 1000 C ...
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Pre-Irradiation 100 OPERATION IN THIS AREA LIMITED (on 25° 150°C Single Pulse 0 Drain-to-Source Voltage (V) Fig 13. Maximum Safe Operating Area 1000 100 D = ...
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IRHLG77110, 2N7612M1 D.U 20V GS 0.01 Ω Fig 16a. Unclamped Inductive Test Circuit Charge Fig 17a. Basic Gate Charge Waveform ...
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Pre-Irradiation Footnotes: À Repetitive Rating; Pulse width limited by maximum junction temperature. Á 25V, starting 25°C, L= 6.6mH Peak 1.8A 10V Â ≤ 1.8A, di/dt ≤ ...