IRHLG73110 IRF [International Rectifier], IRHLG73110 Datasheet - Page 9

• Manufacturer Part Number: IRHLG73110
• Description: RADIATION HARDENED LOGIC LEVEL POWER MOSFET LOGIC LEVEL POWER MOSFET
• Manufacturer: IRF [International Rectifier]

Pre-Irradiation
www.irf.com
Case Outline and Dimensions — MO-036AB
Footnotes:
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maximum junction temperature.
Peak I L = 1.8A, V GS = 10V
V DD ≤ 100V, T J ≤ 150°C
Repetitive Rating; Pulse width limited by
V DD = 25V, starting T J = 25°C, L= 6.6mH
I SD ≤ 1.8A, di/dt ≤ 497A/µs,
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: [phone]
Data and specifications subject to change without notice. 03/2008
Visit us at www.irf.com for sales contact information.
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10 volt V GS applied and V DS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
80 volt V DS applied and V GS = 0 during
Total Dose Irradiation with V GS Bias.
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Total Dose Irradiation with V DS Bias.
irradiation per MlL-STD-750, method 1019, condition A.
IRHLG77110, 2N7612M1
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