IRHLG73110 IRF [International Rectifier], IRHLG73110 Datasheet - Page 3

• Manufacturer Part Number: IRHLG73110
• Description: RADIATION HARDENED LOGIC LEVEL POWER MOSFET LOGIC LEVEL POWER MOSFET
• Manufacturer: IRF [International Rectifier]

1. Part numbers IRHLG77110, IRHLG73110
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Pre-Irradiation
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capabil-
ity. The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
www.irf.com
Radiation Characteristics
Table 2. Typical Single Event Effect Safe Operating Area (Per Die)
BV
V
I
I
I
R
R
Ion
Au
GSS
GSS
DSS
V
Br
GS(th)
DS(on)
DS(on)
I
SD
DSS
(MeV/(mg/cm
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-39)
Static Drain-to-Source On-state „
Diode Forward Voltage
LET
Resistance (MO-036AB)
37
60
84
Parameter
2
))
Energy Range
(MeV)
Fig a. Typical Single Event Effect, Safe Operating Area
305
370
390
120
100
80
60
40
20
0
(µm)
„
„
39
34
30
0
-1
@VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
100
100
100
0V
-2
Up to 300K Rads (Si)
Min
100
1.0
—
-3
—
—
—
—
—
100
100
100
-1V
VGS
-4
Max
-5
0.22
0.25
-100
100
100
100
100
-2V
2.0
1.2
—
10
-6
1
Units
-7
100
100
100
-4V
nA
µA
V
Ω
V
Ω
-8
VDS (V)
IRHLG77110, 2N7612M1
-5V
100
100
100
Br
I
Au
Test Conditions
V
V
V
V
V
V
GS
GS
DS
GS
GS
GS
100
100
-6V
ÄÅ
V
-
= 80V, V
V
= V
= 0V, I
= 4.5V, I
= 0V, I
= 4.5V, I
GS
GS
(Per Die)
DS
= -10V
= 10V
, I
D
100
-7V
D
GS
D
= 250µA
-
-
D
D
= 250µA
= 1.8A
= 1.1A
=0V
= 1.1A
100
-8V
-
-
3