IRHLG73110 IRF [International Rectifier], IRHLG73110 Datasheet - Page 2

• Manufacturer Part Number: IRHLG73110
• Description: RADIATION HARDENED LOGIC LEVEL POWER MOSFET LOGIC LEVEL POWER MOSFET
• Manufacturer: IRF [International Rectifier]

Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
Electrical Characteristics For Each N-Channel Device
Thermal Resistance (Per Die)
Source-Drain Diode Ratings and Characteristics (Per Die)
IRHLG77110, 2N7612M1
BV DSS
∆BV DSS /∆T J Temperature Coefficient of Breakdown
R DS(on)
V GS(th)
∆V GS(th) /∆T J Gate Threshold Voltage Coefficient
I DSS
I GSS
I GSS
Q g
Q gs
Q gd
t d
t r
t d
t f
L S + L D
C iss
C oss
C rss
R thJA
g fs
R g
I S
I SM
V SD
t rr
Q RR Reverse Recovery Charge
t on
2
(on)
(off)
Parameter
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Forward Turn-On Time
Parameter
Junction-to-Ambient
Parameter
Drain-to-Source Breakdown Voltage
Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L S + L D .
Min Typ Max Units
—
Min Typ Max Units
—
—
—
—
—
Min
100
1.0
3.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
-4.4
Typ Max Units
0.11
653
119
2.7
16
—
—
—
—
—
—
—
—
—
—
—
—
—
10
90
—
—
100
223
1.8
7.2
1.2
0.22
-100
—
100
2.0
1.0
2.5
6.0
—
10
15
65
25
—
—
—
15
—
—
—
—
°C/W
20
nC
ns
@ Tj = 25°C (Unless Otherwise specified)
V
A
mV/°C
V/°C
nC
nH
µA
nA
pF
ns
Ω
Ω
V
V
S
T j = 25°C, I F = 1.8A, di/dt ≤ 100A/µs
T
j
Measured from Drain lead (6mm /0.25in
from pack.)with Source wire internally
bonded from Source pin to Drain pad
from pack.) to Source lead (6mm/0.25in
= 25°C, I S = 1.8A, V GS = 0V Ã
Reference to 25°C, I D = 1.0mA
Test Conditions
Test Conditions
V DS = V GS , I D = 250µA
V GS = 4.5V, I D = 1.8A
V GS = 4.5V, R G = 7.5Ω
V DD = 50V, I D = 1.8A,
V GS = 0V, V DS = 25V
V GS = 0V, I D = 250µA
V GS = 4.5V, I D = 1.1A
V GS = 0V, T J =125°C
Typical socket mount
V DS = 80V ,V GS = 0V
f = 1.0MHz, open drain
V DS = 10V, I DS = 1.1A Ã
Test Conditions
V DD ≤ 25V Ã
V GS = -10V
V DS = 80V,
V DS = 50V
f = 1.0MHz
V GS = 10V
Pre-Irradiation
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