Si4435DY-REVA Vishay Intertechnology, Si4435DY-REVA Datasheet
Si4435DY-REVA
Related parts for Si4435DY-REVA
Si4435DY-REVA Summary of contents
Page 1
... P-Channel MOSFET Symbol stg Symbol R thJA www.vishay.com FaxBack 408-970-5600 Si4435DY Vishay Siliconix Limit Unit – 8.0 6 –2.1 2 1.6 –55 to 150 C Limit Unit 50 C/W 2-1 ...
Page 2
... Si4435DY Vishay Siliconix Parameter Symbol Static Gate Threshold Voltage V Gate-Body Leakage I Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current On-State Drain Current On-State Drain Current Drain-Source On-State Resistance Drain-Source On-State Resistance r r DS(on) DS(on) b Forward Transconductance b Diode Forward Voltage ...
Page 3
... On-Resistance vs. Junction Temperature 1 1 1.4 1.2 1.0 0.8 0.6 0.4 0 –50 –25 Si4435DY Vishay Siliconix Transfer Characteristics 125 – Gate-to-Source Voltage (V) GS Capacitance C iss C oss rss – Drain-to-Source Voltage (V) ...
Page 4
... Si4435DY Vishay Siliconix Source-Drain Diode Forward Voltage 150 0.2 0.4 0.6 0.8 V – Source-to-Drain Voltage (V) SD Threshold Voltage 0.8 0.6 0 250 A D 0.2 –0.0 –0.2 –0.4 –0.6 –50 – – Temperature ( C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 ...