Si4435DY-REVA Vishay Intertechnology, Si4435DY-REVA Datasheet - Page 3

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Si4435DY-REVA

Manufacturer Part Number
Si4435DY-REVA
Description
Manufacturer
Vishay Intertechnology
Datasheet
Document Number: 70149
S-49534—Rev. F, 06-Oct-97
0.150
0.125
0.100
0.075
0.050
0.025
50
40
30
20
10
10
0
0
8
6
4
2
0
0
0
0
V
GS
V
I
= 4.5 V
D
DS
= 4.6 A
On-Resistance vs. Drain Current
V
= 15 V
10
10
2
DS
Q
V
Output Characteristics
GS
– Drain-to-Source Voltage (V)
g
I
D
– Total Gate Charge (nC)
= 10 thru 5 V
– Drain Current (A)
Gate Charge
20
20
4
4 V
30
30
6
40
40
8
V
GS
3 V
= 10 V
10
50
50
4500
3600
2700
1800
900
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
50
40
30
20
10
0
0
0
–50
0
0
On-Resistance vs. Junction Temperature
V
I
D
C
GS
–25
= 8.0 A
rss
= 10 V
V
1
V
DS
GS
C
6
T
oss
J
Transfer Characteristics
– Drain-to-Source Voltage (V)
0
– Junction Temperature ( C)
– Gate-to-Source Voltage (V)
www.vishay.com FaxBack 408-970-5600
2
Capacitance
25
T
12
C
C
= -55 C
Vishay Siliconix
iss
50
3
18
75
Si4435DY
4
100
125 C
24
5
125
25 C
150
30
6
2-3

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