Si4435DY-REVA Vishay Intertechnology, Si4435DY-REVA Datasheet - Page 4

• Manufacturer Part Number: Si4435DY-REVA
• Manufacturer: Vishay Intertechnology

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2-4
Si4435DY
Vishay Siliconix
–0.0
–0.2
–0.4
–0.6
30
10
0.8
0.6
0.4
0.2
0.01
1
0.1
–50
2
1
0
10
–4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Source-Drain Diode Forward Voltage
–25
0.2
V
I
D
SD
= 250 A
0
– Source-to-Drain Voltage (V)
T
0.4
J
T
Threshold Voltage
= 150 C
J
– Temperature ( C)
25
0.6
10
Single Pulse
–3
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.8
75
T
J
= 25 C
1.0
100
1.2
125
10
–2
Square Wave Pulse Duration (sec)
150
1.4
10
–1
0.10
0.08
0.06
0.04
0.02
80
60
40
20
0.01
0
0
0
On-Resistance vs. Gate-to-Source Voltage
V
2
GS
1
0.10
– Gate-to-Source Voltage (V)
Single Pulse Power
P
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
DM
JM
Time (sec)
4
– T
t
1
A
= P
t
2
DM
1.00
I
D
Z
thJA
6
thJA
=
t
t
1
2
S-49534—Rev. F, 06-Oct-97
8.0
10
Document Number: 70149
(t)
= 50 C/W
A
8
10.00
30
10