mbn600gr HITACHI, mbn600gr Datasheet

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mbn600gr

Manufacturer Part Number
mbn600gr
Description
Hitachi Igbt Module / Silicon N-channel Igbt
Manufacturer
HITACHI
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
mbn600gr12
Manufacturer:
HITACH
Quantity:
1 000
Part Number:
mbn600gr12A-R
Manufacturer:
HITACHI
Quantity:
560
[Rated 600A/1200V, Single-pack type]
FEATURES
CIRCUIT DIAGRAM
ABSOLUTE MAXIMUM RATINGS (T
Notes; *1 : RMS current of diode ≤ 180 Arms
CHARACTERISTICS (T
Notes; *4 : R
Remark; For actual application,please confirm this spec.sheet is the newest revision.
• Low saturation voltage and high speed.
• Low turn-OFF switching loss.
• Low noise due to built-in free-wheeling diode.
• High reliability structure.
• Isolated heat sink (terminals to base).
Hitachi IGBT Module / Silicon N-Channel IGBT
MBN600GR12A
Reverse Recovery Time
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Forward Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Isolation Voltage
Screw Torque
Collector-Emitter Cut-Off Current
Gate-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
Input Capacitance
Switching Times
Peak Forward Voltage Drop
Thermal Impedance
(Ultra Soft and Fast recovery Diode (USFD))
*2 : Recommended value 1.18 / 7.35 N·m
*3 : Recommended value 2.45 N·m
the suitable R
G
value is the test condition’s value for decision of the switching times, not recommended value, please determine
E
G
E
Item
Item
G
value after the measurement of switching waveforms (overshoot voltage, etc.) with appliance mounted.
IGBT
FWD
DC
1ms
DC
1ms
Terminals(M4/M8)
Mounting
Rise Time
Turn-On Time
Fall Time
Turn-Off Time
C
=25°C)
C
Symbol
V
V
R
R
I
I
CE(sat)
GE(TO)
V
C
CES
GES
t
t
th(j-c)
th(j-c)
t
t
on
t
off
FM
rr
ies
r
f
C
Symbol
=25°C)
V
V
V
T
I
I
P
-
GES
I
T
CES
CP
I
FM
C
stg
F
iso
°C/W
C
j
Unit
mA
nA
pF
µs
µs
V
V
V
Min.
OUTLINE DRAWING
-
-
-
-
-
-
-
-
-
-
-
-
N·m
Unit
°C
°C
W
V
V
A
A
V
RMS
54000
Typ.
0.35
0.15
0.75
2.2
0.2
2.5
-
-
-
-
-
4- 6.5
±500
0.033
Max.
0.35
0.07
1.0
2.8
0.5
0.8
1.2
3.5
0.4
10
-
13
2-M4
E
V
V
I
V
V
V
R
V
Inductive Load
I
I
Junction to case
2500(AC 1 minute)
C
F
F
CE
GE
CE
CE
CC
GE
G
=600A, V
=600A, V
=600A, V
G
=2.2Ω
=1200V, V
=±20V, V
=5V, I
=10V, V
=600V, I
=±15V
1.37 / 7.84
21
-40 ~ +150
-40 ~ +125
110
93
Value
2.94
E
1200
1200
1200
3790
600
±20
600
C
29
Test Conditions
=600mA
GE
GE
GE
*4
GE
C
PDE-N600GR12A-0
CE
=600A
=0V
=-10V,di/dt=600A/µs
=15V
*1
*3
=0V, f=1MHz
C
GE
=0V
=0V
*2
Weight:570g
2-M8
Unit in mm

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mbn600gr Summary of contents

Page 1

... Hitachi IGBT Module / Silicon N-Channel IGBT MBN600GR12A [Rated 600A/1200V, Single-pack type] FEATURES • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode. (Ultra Soft and Fast recovery Diode (USFD)) • High reliability structure. ...

Page 2

V 15V 14V13V12V GE 1200 1000 800 Pc 3790W 600 400 200 Collector to Emitter Voltage, V Collector current vs. Collector to Emitter voltage ...

Page 3

Vcc 600V V 15V Inductive Load 1 0 100 200 300 400 500 Collector Current, I (A) C Switching time vs. Collector current 160 V 600V CC V 15V ...

Page 4

... Or consult Hitachi’s sales department staff event shall Hitachi be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to this data sheets. Hitachi assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in this data sheets ...

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