74HCT1G00GV,125 NXP Semiconductors, 74HCT1G00GV,125 Datasheet - Page 5

IC 2-INPUT NAND GATE SOT753

74HCT1G00GV,125

Manufacturer Part Number
74HCT1G00GV,125
Description
IC 2-INPUT NAND GATE SOT753
Manufacturer
NXP Semiconductors
Series
74HCTr
Datasheet

Specifications of 74HCT1G00GV,125

Logic Type
NAND Gate
Number Of Inputs
2
Number Of Circuits
1
Current - Output High, Low
2mA, 2mA
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
SC-74-5, SOT-753
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
74HCT1G00GV
74HCT1G00GV
935272012125
NXP Semiconductors
11. Dynamic characteristics
Table 8.
GND = 0 V; t
[1]
[2]
12. Waveforms
74HC_HCT1G00_4
Product data sheet
Symbol Parameter
For type 74HC1G00
t
C
For type 74HCT1G00
t
C
pd
pd
Fig 5. Input to output propagation delays
PD
PD
t
C
P
f
C
V
pd
i
D
CC
PD
= input frequency in MHz; f
L
(C
is the same as t
= output load capacitance in pF
= C
A, B input
is used to determine the dynamic power dissipation P
= supply voltage in Volts
L
Y output
For HC1G: V
For HCT1G: V
propagation delay A and B to Y; see
power dissipation
capacitance
propagation delay A and B to Y; see
power dissipation
capacitance
PD
V
Dynamic characteristics
r
CC
= t
V
2
CC
f
f
2
o
6.0 ns; All typical values are measured at T
) = sum of outputs
M
PLH
f
i
M
= 0.5
+
V
= 1.3 V; V
and t
M
V
(C
M
L
t
PHL
PHL
V
Conditions
V
V
o
CC
= output frequency in MHz
I
I
V
V
V
V
V
V
V
.
= GND to V
= GND to V
I
; V
CC
CC
CC
CC
CC
CC
CC
= GND to 3.0 V
2
I
= GND to V
= 2.0 V; C
= 4.5 V; C
= 5.0 V; C
= 6.0 V; C
= 4.5 V; C
= 5.0 V; C
f
o
) where:
CC
CC
L
L
L
L
L
L
CC
t
Figure 5
Figure 5
PLH
mna100
= 50 pF
= 50 pF
= 15 pF
= 50 pF
= 50 pF
= 15 pF
1.5 V
Rev. 04 — 11 July 2007
D
( W).
amb
Fig 6. Load circuitry for switching times
[1]
[2]
[1]
[2]
= 25 C. For test circuit see
74HC1G00; 74HCT1G00
GENERATOR
Min
Test data is given in
C
capacitance.
R
output impedance Z
-
-
-
-
-
-
-
-
L
T
PULSE
= Load capacitance including jig and probe
= Termination resistance should be equal to
40 C to +85 C
Typ
25
19
12
10
21
9
7
8
V
I
o
Table
Max
115
of the pulse generator.
23
20
24
-
-
-
-
R T
Figure 6
8.
DUT
V
CC
40 C to +125 C Unit
Min
-
-
-
-
-
-
-
-
2-input NAND gate
V
© NXP B.V. 2007. All rights reserved.
O
Max
135
C L
27
23
27
mna101
-
-
-
-
5 of 10
ns
ns
ns
ns
pF
ns
ns
pF

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