74LVC10APW,112 NXP Semiconductors, 74LVC10APW,112 Datasheet - Page 7

IC TRIPLE 3-IN NAND GATE 14TSSOP

74LVC10APW,112

Manufacturer Part Number
74LVC10APW,112
Description
IC TRIPLE 3-IN NAND GATE 14TSSOP
Manufacturer
NXP Semiconductors
Series
74LVCr
Datasheet

Specifications of 74LVC10APW,112

Logic Type
NAND Gate
Number Of Inputs
3
Number Of Circuits
3
Current - Output High, Low
24mA, 24mA
Voltage - Supply
1.2 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
14-TSSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
74LVC10APW
74LVC10APW
935260748112
Philips Semiconductors
DC CHARACTERISTICS
At recommended operating conditions voltages are referenced to GND (ground = 0 V).
Note
1. All typical values are at V
AC CHARACTERISTICS
GND = 0 V; t
Note
1. Typical value is measured at V
2003 Jun 20
T
V
V
V
V
I
I
SYMBOL
T
t
SYMBOL
LI
CC
PHL
amb
I
amb
IH
IL
OH
OL
Triple 3-input NAND gate
CC
/t
PLH
= 40 to +85 C
= 40 to +85 C
HIGH level input voltage
LOW-level input voltage
HIGH-level output voltage
LOW-level output voltage
input leakage current
quiescent supply current
additional quiescent supply
current per input pin
r
propagation delay
nA, nB, nC to nY
= t
f
PARAMETER
PARAMETER
2.5 ns; C
L
CC
= 50 pF.
= 3.3 V and T
CC
= 3.3 V and T
V
V
V
V
I
V
I
see Figs 6 and 7
O
O
I
I
I
I
I
I
I
I
I
I
I
I
= V
= V
= 5.5 V or GND
= V
= 0
= V
= 0
O
O
O
O
O
O
O
WAVEFORMS
amb
= 12 mA
= 100 A
= 12 mA
= 24 mA
= 12 mA
= 100 A
= 24 mA
IH
IH
CC
CC
OTHER
TEST CONDITIONS
TEST CONDITIONS
= 25 C.
or V
or V
or GND;
amb
0.6 V;
IL
IL
= 25 C.
7
1.2
2.7 to 3.6
1.2
2.7 to 3.6
2.7
3.0
3.0
3.0
2.7
3.0
3.0
3.6
3.6
2.7 to 3.6
2.7
3.0 to 3.6
V
V
CC
CC
(V)
(V)
V
2.0
V
V
V
V
1.5
1.5
CC
CC
CC
CC
CC
MIN.
MIN.
0.5
0.2 V
0.6
1.0
0.1
5
3.9
TYP.
TYP.
0.1
CC
(1)
(1)
Product specification
GND
0.8
0.40
0.20
0.55
10
500
6.7
5.7
74LVC10A
5
MAX.
MAX.
V
V
V
V
V
V
V
V
V
V
V
ns
ns
A
A
A
UNIT
UNIT

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