em636165 Etron Technology Inc., em636165 Datasheet - Page 19

• Manufacturer Part Number: em636165
• Description: 1m X 16 Bit Synchronous Dram Sdram
• Manufacturer: Etron Technology Inc.

Recommended D.C. Operating Conditions
Active Standby Current in power down mode
Operating Current (Burst mode)
t
Refresh Current
Self Refresh Current
Etron Confidential
Parameter
CK
Operating Current
Precharge Standby Current in non-power down mode
Precharge Standby Current in power down mode
Precharge Standby Current in power down mode
Active Standby Current in non-power down mode
CKE ≤ 0.2V ; for other inputs VIH ≧ VDD - 0.2V, VIL ≤ 0.2V
CKE ≤ V
t
One bank active
t
Input signals are changed every 2clks
t
t
Input signals are changed every 2clks
=t
t
t
CK
RC
CK
CK
RC
CK
V
V
I
CK
I
OL
OH
IL
OL
≥ t
= ∞, CKE ≤ V
= 15ns, CKE ≤ V
= 15ns, CKE ≥ V
≥ t
= 15ns, CS# ≥ V
(min),
RC
RC
(min), Outputs Open
IL
(min)
(max), t
Outputs Open, Multi-bank interleave
( 0V ≤ V
Description/Test condition
IL
CK
(max)
= t
IH
IH
IL
IN
Output disable, 0V ≤ V
(max)
(min), CS# ≥ V
(min), CKE ≥ V
LVTTL Output "H" Level Voltage
CK
LVTTL Output "L" Level Voltage
≤ V
(min)
Output Leakage Current
DD
Input Leakage Current
, All other pins not under test = 0V )
( I
( I
Description
OUT
OUT
IH
IH
= -2mA )
= 2mA )
(min)
OUT
≤ V
19
DDQ
)
(VDD = 3.3V ± 0.3V, T
Symbol
I
I
I
I
I
DD2PS
I
DD2N
DD2P
DD3P
DD3N
I
I
I
DD1
DD4
DD5
DD6
125
110
100
160
- 55
110
2
2
2
2
Min.
- 10
- 10
2.4
－
115
150
100
A
90
90
-6
2
2
2
2
= 0~70 ° C)
Rev. 3.4
Max.
EM636165
Max.
0.4
10
10
－
100
140
90
85
80
-7
2
2
2
2
Unit Note
Apr. 2008
µA
µA
0.8
0.8
1.5
0.6
-7L
V
V
40
15
20
40
40
Unit Note
mA
3, 4
3
3