74LVC2G38DC,125 NXP Semiconductors, 74LVC2G38DC,125 Datasheet - Page 7

• Manufacturer Part Number: 74LVC2G38DC,125
• Description: IC DUAL 2IN NAND GATE O-D 8VSSOP
• Manufacturer: NXP Semiconductors
• Series: 74LVCr

Specifications of 74LVC2G38DC,125

• Logic Type: NAND Gate with Open Drain
• Number Of Inputs: 2
• Number Of Circuits: 2
• Current - Output High, Low: 32mA, 32mA
• Voltage - Supply: 1.65 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: US8, 8-VSSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 74LVC2G38DC-G; 74LVC2G38DC-G; 935273584125

NXP Semiconductors
Table 7.
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
[1]
11. Dynamic characteristics
Table 8.
Voltages are referenced to GND (ground 0 V); for test circuit see
[1]
[2]
74LVC2G38
Product data sheet
Symbol Parameter
I
I
I
ΔI
Symbol Parameter
t
t
C
I
OFF
CC
PZL
PLZ
PD
CC
All typical values are measured at T
Typical values are measured at nominal V
C
P
f
f
C
V
N = number of inputs switching;
Σ(C
i
o
D
CC
PD
= input frequency in MHz;
L
= output frequency in MHz;
= output load capacitance in pF;
= C
L
is used to determine the dynamic power dissipation (P
= supply voltage in V;
× V
input leakage current
power-off leakage current V
supply current
additional supply current
OFF-state to LOW
propagation delay
LOW to OFF-state
propagation delay
power dissipation
capacitance
PD
Static characteristics
Dynamic characteristics
CC
× V
2
× f
CC
o
2
) = sum of outputs.
× f
i
× N + Σ(C
Conditions
nA, nB to nY; see
nA, nB to nY; see
per gate; V
L
V
V
V
V
V
V
V
V
V
V
× V
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
…continued
CC
amb
= 1.65 V to 1.95 V
= 2.3 V to 2.7 V
= 2.7 V
= 3.0 V to 3.6 V
= 4.5 V to 5.5 V
= 1.65 V to 1.95 V
= 2.3 V to 2.7 V
= 2.7 V
= 3.0 V to 3.6 V
= 4.5 V to 5.5 V
Conditions
V
V
V
per pin; V
V
2
I
I
I
CC
CC
× f
= 25 °C.
= 5.5 V or GND; V
or V
= 5.5 V or GND;
I
CC
o
All information provided in this document is subject to legal disclaimers.
= 1.65 V to 5.5 V; I
= 2.3 V to 5.5 V
= GND to V
) where:
and at T
O
= 5.5 V; V
I
Figure 8
Figure 8
= V
Rev. 8 — 4 November 2010
amb
CC
CC
− 0.6 V; I
= 25 °C.
CC
D
in μW).
CC
= 0 V
O
= 0 V to 5.5 V
[2]
= 0 A
O
Figure
= 0 A;
Min
1.2
0.7
0.7
0.7
0.5
1.2
0.7
0.7
0.7
0.5
-
−40 °C to +85 °C
9.
Typ
3.0
1.8
2.5
2.1
1.5
3.0
1.8
2.5
2.1
1.5
5
Dual 2-input NAND gate; open drain
[1]
Min
-
-
-
-
Max
8.6
4.8
4.4
4.1
3.3
8.6
4.8
4.4
4.1
3.3
-
Typ
-
-
-
-
−40 °C to +125 °C Unit
74LVC2G38
Min
1.2
0.7
0.7
0.7
0.5
1.2
0.7
0.7
0.7
0.5
-
Max
±20
±20
40
5000
© NXP B.V. 2010. All rights reserved.
Max
10.8
10.8
6.0
5.5
5.2
4.2
6.0
5.5
5.2
4.2
-
Unit
μA
μA
μA
μA
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
pF
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