TIG062E8_0910 SANYO [Sanyo Semicon Device], TIG062E8_0910 Datasheet
TIG062E8_0910
Manufacturer Part Number
TIG062E8_0910
Description
Light-Controlling Flash Applications
Manufacturer
SANYO [Sanyo Semicon Device]
Datasheet
1.TIG062E8_0910.pdf
(5 pages)
Ordering number : ENA1480A
TIG062E8
Features
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Marking : ZC
* : Concerning dv / dt (slope of Collector Voltage at the time of Turn-OFF), dv / dt > 400V / μs will be 100% screen-detected in the circuit shown as Fig. 1.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage (DC)
Gate-to-Emitter Voltage (Pulse)
Collector Current (Pulse)
Maximum Collector-to-Emitter dv / dt
Channel Temperature
Storage Temperature
•
•
•
•
•
•
•
Low-saturation voltage.
Low voltage drive (3V).
Enhansment type.
Built-in Gate-to-Emitter protection diode.
Mounting Height 0.9mm, Mounting Area 8.12mm
dv / dt guarantee*.
Halogen free compliance.
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer ' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer ' s
products or equipment.
Parameter
V CES
V GES
V GES
I CP 1
I CP 2
I CP 3
dV CE / dt
Tch
Tstg
Symbol
N-Channel IGBT
Light-Controlling Flash Applications
www.semiconductor-sanyo.com/network
SANYO Semiconductors
PW≤1ms
C M =150μF, V GE =3V
C M =100μF, V GE =3.3V
C M =100μF, V GE =4V
V CE ≤320V, starting Tch=25°C
2
.
O2109 TK IM TC-00002170 / 61009PJ MS IM TC-00001992
Conditions
DATA SHEET
Ratings
-40 to +150
400
100
130
150
400
150
±6
±8
No. A1480-1/5
V / μs
Unit
°C
°C
A
A
A
V
V
V
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TIG062E8_0910 Summary of contents
Page 1
Ordering number : ENA1480A TIG062E8 Features Low-saturation voltage. • Low voltage drive (3V). • Enhansment type. • Built-in Gate-to-Emitter protection diode. • Mounting Height 0.9mm, Mounting Area 8.12mm • guarantee*. • Halogen free compliance. • Specifi cations ...
Page 2
Electrical Characteristics at Ta=25°C Parameter Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Cutoff Current Gate-to-Emitter Leakage Current Gate-to-Emitter Threshold Voltage Collector-to-Emitter Saturation Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Package Dimensions unit : mm (typ) 7011A-004 Top View 2.9 0. ...
Page 3
150 125 100 Collector-to-Emitter Voltage ...
Page 4
SW Time -- 1000 100 100 Gate Series Resistance Ω 160 V CE ...
Page 5
Note : TIG062E8 has protection diode between gate and emitter but handling it requires suffi cient care to be taken. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, ...