TIG062E8_0910 SANYO [Sanyo Semicon Device], TIG062E8_0910 Datasheet - Page 2

• Manufacturer Part Number: TIG062E8_0910
• Description: Light-Controlling Flash Applications
• Manufacturer: SANYO [Sanyo Semicon Device]

Electrical Characteristics at Ta=25°C
Package Dimensions
unit : mm (typ)
7011A-004
Fig.1 Large Current R Load Switching Circuit
Note1. Gate Series Resistance R G ≥ 250 Ω is recommended for protection purpose at the time of turn OFF. However,
Note2. The collector voltage gradient dv / dt must be smaller than 400V / μs to protect the device when it is turned off.
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Cutoff Current
Gate-to-Emitter Leakage Current
Gate-to-Emitter Threshold Voltage
Collector-to-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
if dv / dt ≤ 400V / μs is satisfi ed at customer’s actual set evaluation, R G < 250 Ω can also be used.
R G
1
8
0.65
Parameter
Bot t om View
Top View
2.9
100kΩ
5
R L
4
0.3
TIG062E8
1 : Emitter
2 : Emitter
3 : Emitter
4 : Gate
5 : Collector
6 : Collector
7 : Collector
8 : Collector
SANYO : ECH8
0.15
I CES
C M
V (BR)CES
I GES
Cies
Coes
Cres
V GE (off)
V CE (sat)
Symbol
0 t o 0.02
+
I C =2mA, V GE =0V
V CE =320V, V GE =0V
V GE =±6V, V CE =0V
V CE =10V, f=1MHz
V CE =10V, f=1MHz
V CE =10V, f=1MHz
V CE =10V, I C =1mA
I C =100A, V GE =3V
V CC
TIG062E8
Conditions
Electrical Connection
8
1
7
2
6
3
min
400
0.4
5
4
Ratings
typ
2400
32
24
5
Top view
1 : Emitter
2 : Emitter
3 : Emitter
4 : Gate
5 : Collector
6 : Collector
7 : Collector
8 : Collector
max
±10
0.9
10
No. A1480-2/5
8
Unit
μA
μA
pF
pF
pF
V
V
V