PSMN2R0-30YL_10 NXP [NXP Semiconductors], PSMN2R0-30YL_10 Datasheet - Page 6

• Manufacturer Part Number: PSMN2R0-30YL_10
• Description: N-channel TrenchMOS logic level FET
• Manufacturer: NXP [NXP Semiconductors]

NXP Semiconductors
Table 6.
[1]
PSMN2R0-30YL_3
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
Tested to JEDEC standards where applicable.
R
(mΩ)
DSon
(A)
80
60
40
20
I
7
6
5
4
3
2
1
D
0
function of gate-source voltage; typical values
of drain current; typical values
Transfer characteristics: drain current as a
Drain-source on-state resistance as a function
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
V
GS
(V) = 3 V
50
1
T
…continued
j
= 150 °C
4
10
100
2
Conditions
I
I
V
S
S
DS
= 25 A; V
= 20 A; dI
V
All information provided in this document is subject to legal disclaimers.
= 20 V
I
GS
D
003aac470
003aac475
(A)
25 °C
(V)
150
GS
Rev. 03 — 7 January 2010
S
3
/dt = -100 A/µs; V
= 0 V; T
j
= 25 °C; see
Fig 6.
Fig 8.
GS
160
140
120
100
(S)
g
150
100
(A)
80
60
40
I
50
fs
D
0
= 0 V;
function of drain-source voltage; typical values
drain current; typical values
Output characteristics: drain current as a
Forward transconductance as a function of
0
0
10
Figure 17
4
N-channel TrenchMOS logic level FET
2
20
PSMN2R0-30YL
4
Min
-
-
-
40
V
GS
6
(V) = 3
Typ
0.78
43
49
60
© NXP B.V. 2010. All rights reserved.
8
003aac474
003aac477
I
D
V
Max
1.2
-
-
(A)
DS
2.8
2.6
2.4
2.2
(V)
10
80
Unit
V
ns
nC
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