STQ1NE10L-AP STMICROELECTRONICS [STMicroelectronics], STQ1NE10L-AP Datasheet - Page 4

• Manufacturer Part Number: STQ1NE10L-AP
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

Electrical characteristics
2
4/13
Electrical characteristics
(T
Table 3.
Table 4.
Symbol
Symbol
V
R
CASE
V
t
(BR)DG
C
t
I
I
C
DS(on)
C
Q
GS(th)
d(off)
Q
r(on)
DSS
GSS
Q
g
oss
t
t
iss
rss
fs
gs
gd
f
f
g
= 25°C unless otherwise specified)
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Clamped voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source ON
resistance
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
GS
= 0)
I
V
V
T
V
V
V
V
V
V
V
R
Figure 12
V
R
Figure 12
V
V
Figure 13
D
C
DS
DS
GS
DS
GS
GS
GS
DS
DS
DD
DD
DD
G
G
= 250µA, V
= 125°C
= 4.7 Ω, V
= 4.7Ω, V
= Max rating
= Max rating
= ±16 V
= V
= 10 V, I
= 5 V, I
= 15 V, I
= 25 V, f = 1MHz, V
= 5V
= 50 V, I
= 50 V, I
= 80 V, I
Test conditions
Test conditions
GS
, I
D
D
D
D
D
D
D
= 0.5 A
GS
GS
GS
= 250µA
= 0.5 A
= 0.5 µA
= 0.5 A,
= 0.5 A
= 1A,
= 5 V
= 0
= 10 V
GS
= 0
Min.
100
1
Min. Typ. Max.
Typ.
0.30
0.35
345
1.5
3.5
45
20
11
12
20
13
2
7
±100
Max.
STQ1NE10L
0.40
0.45
2.5
10
1
Unit
Unit
µA
µA
nA
nC
nC
nC
pF
pF
pF
V
V
ns
ns
ns
ns
ns
Ω
Ω
S