nup4103 ON Semiconductor, nup4103 Datasheet - Page 2

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nup4103

Manufacturer Part Number
nup4103
Description
Quad Tvs Array In 5 Bump Flip Chip Pkg
Manufacturer
ON Semiconductor
Datasheet

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ELECTRICAL CHARACTERISTICS
1. TVS devices are normally selected according to the working peak reverse voltage (V
2. V
Reverse Stand−Off Voltage
Breakdown Voltage
Leakage Current
Junction Capacitance
50
45
40
35
30
25
20
or continuous peak operating voltage level.
BR
0
Figure 1. Reverse Voltage vs Junction Capacitance
is measured at pulse test current I
Parameter
1
V
R
, Reverse Voltage (V)
2
3
(T
T
.
J
Symbol
= 25°C unless otherwise specified)
TYPICAL PERFORMANCE CURVES
V
V
RWM
C
I
BR
R
J
(T
4
J
= 25°C unless otherwise specified)
http://onsemi.com
I
V
RWM
I
V
T
5
R
RM
= 1.0 mA (Note 2)
= 2.5 V, f = 1 MHz
Conditions
= 10 mA (Note 1)
100.0E−12
= 3.3 V per line
2
100.0E−9
10.0E−12
10.0E−9
1.0E−9
−40
Figure 2. Reverse Leakage Current
RWM
−15
) which should be equal or greater than the DC
vs Junction Temperature
Min
6.0
T, Temperature (°C)
10
Typ
7.0
30
35
Max
100
5.5
8.0
60
Unit
nA
pF
V
V
85

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