pbss9110t NXP Semiconductors, pbss9110t Datasheet

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pbss9110t

Manufacturer Part Number
pbss9110t
Description
100 V, 1 A Pnp Low Vcesat Biss Transistor
Manufacturer
NXP Semiconductors
Datasheet

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Product specification
Supersedes data of 2004 May 06
book, halfpage
DATA SHEET
PBSS9110T
100 V, 1 A
PNP low V
DISCRETE SEMICONDUCTORS
CEsat (BISS)
M3D088
transistor
2004 May 13

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pbss9110t Summary of contents

Page 1

... DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage PBSS9110T 100 PNP low V Product specification Supersedes data of 2004 May 06 M3D088 transistor CEsat (BISS) 2004 May 13 ...

Page 2

... CEsat PINNING handbook, halfpage (1) MARKING CODE *U7 PACKAGE DESCRIPTION plastic surface mounted package; 3 leads 2 Product specification PBSS9110T PARAMETER collector-emitter voltage collector current (DC) repetitive peak collector current equivalent on-resistance PIN DESCRIPTION 1 base 2 emitter 3 collector Top view MAM256 Fig ...

Page 3

... May 13 transistor CONDITIONS open emitter open base open collector limited by T j(max note 1 amb note 2 amb 001aaa811 120 160 amb 3 Product specification PBSS9110T MIN. MAX. UNIT 120 V 100 300 mA 300 mW 480 mW 150 C 65 ...

Page 4

... Fig.3 Transient thermal impedance as a function of pulse time; typical values. 2004 May 13 transistor CONDITIONS in free air; note 1 in free air; note collector mounting pad. (5) = 0.2. (7) = 0.05. (6) = 0.1. (8) = 0.02. 4 Product specification PBSS9110T VALUE 417 260 2 collector mounting pad. 001aaa814 (s) p (9) = 0.01. (10 UNIT K/W K ...

Page 5

... Mounted on printed-circuit board; standard footprint. ( (3) = 0.5. (2) = 0.75. (4) = 0.33. Fig.4 Transient thermal impedance as a function of pulse time; typical values. 2004 May 13 transistor (5) = 0.2. (7) = 0.05. (6) = 0.1. (8) = 0.02. 5 Product specification PBSS9110T 001aaa813 (s) p (9) = 0.01. (10 ...

Page 6

... 100 mA 100 MHz MHz 6 Product specification PBSS9110T MIN. TYP. = 150 150 150 150 125 170 100 = MAX. UNIT 100 100 nA 100 ...

Page 7

... (1) T (2) T (3) T Fig.6 001aaa378 V CEsat ( (mA amb (1) I (2) I Fig.8 7 Product specification PBSS9110T 1.2 BE (1) 0.8 (2) (3) 0 amb = 25 C. amb = 100 C. amb Base-emitter voltage as a function of collector current; typical values ...

Page 8

... Fig.10 Base-emitter saturation voltage as a 001aaa382 RCEsat (1) (2) ( (mA (1) I (2) I Fig.12 Equivalent on-resistance as a function of 8 PBSS9110T 10 BEsat ( 20 amb function of collector current; typical values ...

Page 9

... I = 22 mA 31.5 mA. ( 13.5 mA Fig.13 Collector current as a function of collector-emitter voltage; typical values. 2004 May 13 transistor 001aaa384 (1) (2) (3) (4) (5) (6) (7) (8) (9) (10 ( mA. B (10 4.5 mA Product specification PBSS9110T ...

Page 10

... IEC SOT23 2004 May 13 transistor scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 REFERENCES JEDEC EIAJ TO-236AB 10 Product specification PBSS9110T detail 0.45 0.55 0.2 0.1 0.15 0.45 EUROPEAN PROJECTION SOT23 ISSUE DATE 97-02-28 99-09-13 ...

Page 11

... Product specification PBSS9110T DEFINITION These products are not Philips Semiconductors ...

Page 12

Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited ...

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