UNR911BJ PANASONIC [Panasonic Semiconductor], UNR911BJ Datasheet

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UNR911BJ

Manufacturer Part Number
UNR911BJ
Description
Silicon PNP epitaxial planer transistor
Manufacturer
PANASONIC [Panasonic Semiconductor]
Datasheet
Transistors with built-in Resistor
UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/
911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ
Silicon PNP epitaxial planer transistor
For digital circuits
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Features
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
SS-Mini type package, allowing automatic insertion through tape
packing and magazine packing.
Resistance by Part Number
UN9111
UN9112
UN9113
UN9114
UN9115
UN9116
UN9117
UN9118
UN9119
UN9110
UN911D
UN911E
UN911F
UN911H
UN911L
UNR911AJ
UNR911BJ
UNR911CJ
Absolute Maximum Ratings
Parameter
Marking Symbol
6A
6B
6C
6D
6E
6F
6H
6I
6K
6L
6M
6N
6O
6P
6Q
6X
6Y
6Z
Symbol
V
V
T
P
T
CBO
I
CEO
stg
C
T
j
0.51k
100k
100k
4.7k
4.7k
2.2k
4.7k
10k
22k
47k
10k
10k
22k
47k
47k
47k
1k
(R
1
)
(Ta=25˚C)
–55 to +125
Ratings
–100
–50
–50
125
125
100k
5.1k
4.7k
10k
22k
47k
47k
10k
10k
22k
10k
10k
47k
(R
2
)
Unit
mW
mA
˚C
˚C
V
V
Internal Connection
B
R1
1 : Base
2 : Emitter
3 : Collector
SS–Mini Flat Type Pakage (J type)
R2
1
2
0.4
0.80
0.425 0.425
1.60 0.05
0.85
1.6 0.15
0.8 0.1
+0.05
–0.03
0.80 0.05
1 : Base
2 : Emitter
3 : Collector
SS–Mini Type Pakage
0.2 0.1
0.4
3
C
E
Unit: mm
Unit: mm
1

Related parts for UNR911BJ

UNR911BJ Summary of contents

Page 1

... UN9119 6K UN9110 6L 47k UN911D 6M 47k UN911E 6N 47k UN911F 6O 4.7k UN911H 6P 2.2k UN911L 6Q 4.7k UNR911AJ 6X 100k UNR911BJ 6Y 100k UNR911CJ 6Z Absolute Maximum Ratings Parameter Symbol Collector to base voltage V CBO Collector to emitter voltage V CEO Collector current I C Total power dissipation P T Junction temperature T j Storage temperature ...

Page 2

... Collector to emitter voltage UN9111 UN9112/911E Forward UN9113/9114/UNR911AJ/911CJ current transfer UN9115*/9116*/9117*/9110*UNR911BJ ratio UN911F/911D/9119/911H UN9118/911L Collector to emitter saturation voltage Output voltage high level Output voltage low level UN9113/UNR911BJ UN911D UN911E UNR911AJ Transition frequency UNR911AJ UN9111/9114/9115 UN9112/9117 UN9113/9110/911D/911E Input UN9116/911F/911L resis- UN9118 tance ...

Page 3

Transistors with built-in Resistor Electrical Characteristics (continued) Parameter UN9111/9112/9113/911L UN9114 UN9118/9119 UN911D Resis- tance UN911E ratio UN911F UN911H UNR911AJ Resistance between Emitter to Base UNR911CJ UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/ 911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ (Ta=25˚C) Symbol Conditions min typ max Unit ...

Page 4

Transistors with built-in Resistor Common characteristics chart P — 150 125 100 100 120 140 160 Ambient temperature Ta ( ˚C ) Characteristics charts of UN9111 I — V ...

Page 5

Transistors with built-in Resistor Characteristics charts of UN9112 I — –160 Ta=25˚C I =–1.0mA B –140 –0.9mA –0.8mA –120 –0.7mA –0.6mA –100 –0.5mA –80 –0.4mA –60 –0.3mA –0.2mA –40 –0.1mA – –2 –4 –6 –8 ...

Page 6

Transistors with built-in Resistor C — f=1MHz Ta=25˚ –0.1 –0.3 –1 –3 –10 –30 –100 ( V ) Collector to base voltage V CB Characteristics charts of ...

Page 7

Transistors with built-in Resistor Characteristics charts of UN9115 I — –160 Ta=25˚C I =–1.0mA –140 B –0.9mA –0.8mA –0.7mA –120 –0.6mA –100 –0.5mA –0.4mA –80 –0.3mA –60 –0.2mA –40 –0.1mA – –2 –4 –6 –8 ...

Page 8

Transistors with built-in Resistor C — f=1MHz Ta=25˚ –0.1 –0.3 –1 –3 –10 –30 –100 ( V ) Collector to base voltage V CB Characteristics charts of ...

Page 9

Transistors with built-in Resistor Characteristics charts of UN9118 I — –240 Ta=25˚C –200 I =–1.0mA B –0.9mA –160 –0.8mA –0.7mA –120 –0.6mA –0.5mA –80 –0.4mA –0.3mA –40 –0.2mA –0.1mA 0 0 –2 –4 –6 –8 –10 –12 ...

Page 10

Transistors with built-in Resistor C — f=1MHz Ta=25˚ –0.1 –0.3 –1 –3 –10 –30 –100 ( V ) Collector to base voltage V CB Characteristics charts of ...

Page 11

Transistors with built-in Resistor Characteristics charts of UN911D I — –60 I =–1.0mA Ta=25˚C B –0.9mA –0.8mA –50 –40 –0.3mA –30 –0.2mA –0.7mA –0.6mA –0.5mA –20 –0.4mA –0.1mA – –2 –4 –6 –8 –10 –12 ...

Page 12

Transistors with built-in Resistor C — f=1MHz Ta=25˚ –0.1 –0.3 –1 –3 –10 –30 –100 ( V ) Collector to base voltage V CB Characteristics charts of ...

Page 13

Transistors with built-in Resistor Characteristics charts of UN911H I — –120 Ta=25˚C –100 –80 I =–0.5mA B –0.4mA –60 –0.3mA –40 –0.2mA –20 –0.1mA 0 0 –2 –4 –6 –8 –10 – Collector to ...

Page 14

Transistors with built-in Resistor C — f=1MHz Ta=25˚ –1 –3 –10 –30 –100 ( V ) Collector to base voltage UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/ 911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ V — ...

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