UNR911BJ PANASONIC [Panasonic Semiconductor], UNR911BJ Datasheet - Page 7

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UNR911BJ

Manufacturer Part Number
UNR911BJ
Description
Silicon PNP epitaxial planer transistor
Manufacturer
PANASONIC [Panasonic Semiconductor]
Datasheet
Transistors with built-in Resistor
–160
–140
–120
–100
–160
–140
–120
–100
–80
–60
–40
–20
–80
–60
–40
–20
Collector to emitter voltage V
0
6
5
4
3
2
1
0
–0.1 –0.3
0
0
0
Characteristics charts of UN9115
Characteristics charts of UN9116
Collector to base voltage V
Collector to emitter voltage V
–2
–2
I
B
=–1.0mA
–4
–4
C
–1
I
I
C
ob
C
— V
— V
I
— V
B
–6
–3
–6
=–1.0mA
CE
CE
CB
–10
–8
–0.9mA
–8
–0.9mA
–0.8mA
–0.8mA
f=1MHz
I
Ta=25˚C
E
Ta=25˚C
=0
Ta=25˚C
–0.7mA
–30
–10
CE
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
–10
CB
CE
( V )
( V )
–100
–12
–12
( V )
–10000
–0.03
–0.01
–0.03
–0.01
–3000
–100
–100
–1000
UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/
–300
–0.3
–0.1
–0.3
–0.1
–100
–30
–30
–30
–10
–10
–10
–3
–3
–1
–3
–1
–1
–0.1 –0.3
–0.1 –0.3
–0.4
911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ
Collector current I
Collector current I
–25˚C
–0.6
Input voltage V
V
V
–25˚C
–1
–1
CE(sat)
I
CE(sat)
O
–0.8
25˚C
— V
25˚C
–3
–3
— I
— I
–1.0
IN
–10
–10
IN
C
C
C
C
Ta=75˚C
Ta=75˚C
V
Ta=25˚C
–1.2
( V )
( mA )
( mA )
O
–30
–30
I
I
C
C
=–5V
/I
/I
B
B
=10
=10
–100
–100
–1.4
–0.03
–0.01
–100
–0.3
–0.1
400
300
200
100
400
300
200
100
–30
–10
–3
–1
0
0
–0.1 –0.3
–1
–1
Collector current I
Collector current I
–3
–3
Output current I
–10
–10
V
h
h
–1
FE
FE
IN
— I
— I
–30
— I
–30
–3
C
C
O
Ta=75˚C
–100 –300 –1000
–100 –300 –1000
Ta=75˚C
–10
O
C
C
25˚C
–25˚C
–25˚C
25˚C
V
V
V
Ta=25˚C
CE
( mA )
CE
( mA )
O
( mA )
= –0.2V
–30
= –10V
= –10V
–100
7

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