CHA2091-99F/00 UMS [United Monolithic Semiconductors], CHA2091-99F/00 Datasheet

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CHA2091-99F/00

Manufacturer Part Number
CHA2091-99F/00
Description
36-40GHz Low Noise Amplifier
Manufacturer
UMS [United Monolithic Semiconductors]
Datasheet

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Part Number:
CHA2091-99F/00
Manufacturer:
UMS
Quantity:
1 400
Part Number:
CHA2091-99F/00
Quantity:
53
Description
The CHA2091 is a two-stage wide band
monolithic low noise amplifier.
The circuit is manufactured with a standard
HEMT process : 0.25µm gate length, via
holes through the substrate, air bridges
and electron beam gate lithography.
It is supplied in chip form.
Main Features
■ Broad band performance 36-40GHz
■ 3.0dB noise figure, 36-40GHz
■ 14dB gain,
■ Low DC power consumption, 50mA
■ 20dBm 3rd order intercept point
■ Chip size : 1,67 x 1,03 x 0.1mm
Main Characteristics
Tamb = +25°C
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Symbol
Ref. : DSCHA20919340 -06 Dec. 99
NF
G
G
Noise figure, 36-40GHz
Gain
Gain flatness
0.5dB gain flatness
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
36-40GHz Low Noise Amplifier
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
GaAs Monolithic Microwave IC
United Monolithic Semiconductors S.A.S.
Parameter
1/8
IN
20
18
16
14
12
10
8
6
4
2
0
20
Specifications subject to change without notice
On wafer typical measurements.
Min
25
12
30
Vg 1
Typ
3.0
14
0.5
35
50
Vg 2
CHA2091
40
Max
Frequency ( GHz )
4.0
1.0
25
45
Vd
Unit
50
dB
dB
dB
10
9
8
7
6
5
4
3
2
1
0
OUT

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CHA2091-99F/00 Summary of contents

Page 1

... Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2091 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography supplied in chip form. ...

Page 2

... Operating temperature range Tstg Storage temperature range (1) Operation of this device above anyone of these paramaters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA20919340 -06 Dec. 99 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 36-40GHz Low Noise Amplifier Parameter ...

Page 3

... Ref. : DSCHA20919340 -06 Dec. 99 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 MS12 PS12 MS21 dB ° dB -57.3 -141 -12.4 -54.1 -157 -9.98 -50.3 173.7 -8.72 -48.1 158 -6.92 -49.6 138.4 -5.05 -47.8 120.7 -3.74 -48.2 107 -3.31 -49.1 114.5 -2.37 -50.1 130.8 -0.72 -45.5 130.2 ...

Page 4

... Typical Gain and Noise Figure measurements on wafer. Ref. : DSCHA20919340 -06 Dec. 99 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 36-40GHz Low Noise Amplifier DBS11 DBS22 Frequency ( GHz ) Gain ...

Page 5

... Typical Output Power and Gain measurements in test jig Ref. : DSCHA20919340 -06 Dec. 99 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 Freq = 37GHz - Input Power ( dBm ) Freq = 39.5GHz - Input Power ( dBm ) ...

Page 6

... CHA2091 Typical Chip Assembly IN To Vg1 DC Gate supply feed Dimensions : 1670 x 1030µm Mechanical data 445 Ref. : DSCHA20919340 -06 Dec. 99 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 36-40GHz Low Noise Amplifier Drain supply feed 47pF 50 ...

Page 7

... The first step to bias the amplifier is to tune the Vg1 =-1V and Vg2 to drive 30mA for the full amplifier. Then Vg1 is reduced to obtain current through the amplifier. Ref. : DSCHA20919340 -06 Dec. 99 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 ...

Page 8

... CHA2091 Ordering Information Chip form : CHA2091-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S ...

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