CHA2291-99F/00 UMS [United Monolithic Semiconductors], CHA2291-99F/00 Datasheet

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CHA2291-99F/00

Manufacturer Part Number
CHA2291-99F/00
Description
10-18GHz Low Noise, Variable Gain Amplifier
Manufacturer
UMS [United Monolithic Semiconductors]
Datasheet

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Part Number:
CHA2291-99F/00
Manufacturer:
UMS
Quantity:
1 400
Description
The CHA2291 is a high gain
monolithic low noise amplifier with variable gain.
It is designed for a wide range of applications,
from military to commercial communication
systems.The backside of the chip is both RF and
DC grounded. This helps simplify the assembly
process.
The circuit is manufactured with a PM-HEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
Main Characteristics
Tamb. = 25°C
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA22912149 - 29-May-021
Frequency range : 10-18GHz
2.2dB Noise Figure.
23dB gain
Gain control range: 20dB
DC power consumption: 180mA @ 5V
Chip size : 2.49 X 1.23 X 0.10 mm
Gctrl
Fop
NF
Id
G
10-18GHz Low Noise, Variable Gain Amplifier
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Operating frequency range
Small signal gain
Noise figure
Gain control range with Vc variation
Bias current
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
GaAs Monolithic Microwave IC
Parameter
four-stage
1/6
26
24
22
20
18
16
14
12
10
8
6
4
2
0
10
Typical on wafer measurements : Gain & NF
11
V5
Specifications subject to change without notice
Gain (dB)
NF (dB)
Vg1 Vg2 Vg3,4 Vc
Min
12
10
13
Frequency (GHz)
Typ
180
2.2
23
20
14
CHA2291
Vd2,3,4
Max
18
15
16
Unit
GHz
mA
dB
dB
dB
17
18

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CHA2291-99F/00 Summary of contents

Page 1

... Low Noise, Variable Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2291 is a high gain monolithic low noise amplifier with variable gain designed for a wide range of applications, from military to commercial communication systems.The backside of the chip is both RF and DC grounded. This helps simplify the assembly process ...

Page 2

... Maximum channel temperature Ta Operating temperature range Tstg Storage temperature range (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA22912149 - 29-May-02 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 Parameter V5= Vd2,3,4 Vc Parameter ...

Page 3

... S21(dB -12 -16 - Gain, Return Loss & Noise Figure versus frequency Ref. : DSCHA22912149 - 29-May-02 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 Frequency (GHz) NF (dB) S11 (dB Frequency (GHz) ...

Page 4

... Ref. : DSCHA22912149 - 29-May-02 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 12GHz 16GHz 20GHz -0,6 -0,4 -0,2 0 0,2 Vc (V) Gain versus Vc 14GHz Output Power (dBm) Gain versus Output power 4/6 Specifications subject to change without notice ...

Page 5

... Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire is recommended Bond Pad:100 x 100 µm ( Chip thickness : 100µm. All dimensions are in micrometers ) Ref. : DSCHA22912149 - 29-May-02 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 Vd2,3,4 DC drain supply feed ...

Page 6

... Ordering Information Chip form : CHA2291-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S ...

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