CHA2291-99F/00 UMS [United Monolithic Semiconductors], CHA2291-99F/00 Datasheet - Page 2

• Manufacturer Part Number: CHA2291-99F/00
• Description: 10-18GHz Low Noise, Variable Gain Amplifier
• Manufacturer: UMS [United Monolithic Semiconductors]

10-18GHz LNA VGA
Electrical Characteristics for Broadband Operation
Tamb = +25°C, V5=Vd2,3,4= 5V
Absolute Maximum Ratings
Tamb. = 25°C (1)
VSWRout Output VSWR (1)
(1) These values are representative of on-wafer measurements that are made without bonding
(2) For optimum noise figure, the bias current Id1 should be adjusted to 25mA with Vg1 voltage.
(3) With Id1=25mA, adjust Vg2,3,4 voltage for a total drain current around 180mA.
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Symbol
VSWRin
Symbol
wires at RF ports.
Ref. : DSCHA22912149 - 29-May-02
P1dB
Gctrl
Tstg
Vdg
Fop
Tch
Pin
NF
Id1
Vd
Vd
Vg
Vc
Ta
G
Is
Id
Id
G
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Operating frequency range
Small signal gain (1)
Small signal gain flatness (1)
Reverse isolation (1)
Noise figure with Vc=1.2V (1)
Gain control range versus Vc
Output power at 1dB compression with Vc=1.2V
Input VSWR (1)
DC voltage
Bias current (2) with Vc=1.2V
Bias current total (3) with Vc=1.2V
Tel.: [phone] - Fax : [phone]
Maximum Drain bias voltage
Maximum drain bias current
Gate bias voltage
Maximum Control bias voltage
Operating temperature range
Storage temperature range
Maximum drain to gate voltage (Vd - Vg)
Maximum input power overdrive (2)
Maximum channel temperature
Parameter
Parameter
V5= Vd2,3,4
Vc
2/6
Specifications subject to change without notice
Min
-1.5
10
-2.5 to +0.4
-55 to +125
-40 to +85
[-0.7, +1.2]
Values
+5.25
+175
+1.5
+5.0
250
+15
Typ
180
2.2
23
±1
60
20
10
25
5
CHA2291
2.5:1
Max
3.0:1
+1.3
18
dBm
Unit
mA
Unit
dBm
GHz
°C
°C
°C
mA
mA
V
V
V
V
dB
dB
dB
dB
dB
V
V