CHA2098B99F/00 UMS [United Monolithic Semiconductors], CHA2098B99F/00 Datasheet

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CHA2098B99F/00

Manufacturer Part Number
CHA2098B99F/00
Description
20-40GHz High Gain Buffer Amplifier
Manufacturer
UMS [United Monolithic Semiconductors]
Datasheet
Description
The CHA2098b is a high gain broadband three-
stage monolithic buffer amplifier. It is designed
for a wide range of applications, from military to
commercial
backside of the chip is both RF and DC grounds.
This helps simplify the assembly process.
The circuit is manufactured with a P-HEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
■ Broadband performances : 20-40GHz
■ 16dBm output power ( 1dB gain comp. )
■ 19dB 1.5dB gain
■ Low DC power consumption, 150mA @ 3.5V
■ Chip size :
Main Characteristics
Tamb. = 25°C
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Symbol
Ref. : DSCHA20981233 21- August-01
P1dB
Fop
G
Id
Operating frequency range
Small signal gain
Output power at 1dB gain compression
Bias current
1.67 X 0.97 X 0.10 mm
20-40GHz High Gain Buffer Amplifier
communication
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
GaAs Monolithic Microwave IC
United Monolithic Semiconductors S.A.S.
Parameter
systems. The
1/8
-15
-25
25
15
IN
-5
5
10
Specifications subject to change without notice
Vg1
15
Min
Typical on-wafer results :
20
17
13
Vg2
20
Vd1
Frequency ( GHz )
Typ
Vg3
25
150
19
16
CHA2098b
Vd2,3
30
Max
200
40
35
40
Unit
GHz
dBm
mA
dB
OUT
45

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CHA2098B99F/00 Summary of contents

Page 1

High Gain Buffer Amplifier GaAs Monolithic Microwave IC Description The CHA2098b is a high gain broadband three- stage monolithic buffer amplifier designed for a wide range of applications, from military to commercial communication backside of the chip ...

Page 2

CHA2098b Electrical Characteristics for Broadband Operation Tamb = +25°C, Vd1,2,3 = 3.5V Symbol Fop Operating frequency range (1) G Small signal gain (1) Small signal gain flatness ( Reverse isolation (1) P1db Output power at 1dB gain compression ...

Page 3

High Gain Buffer Amplifier Typical Performance Tamb=+25°C, Vd=3.5V, Vg=-0. -10 -15 -20 -25 - Input and Output Loss vs. Frequency Ref. : ...

Page 4

CHA2098b Gain and Compressed Power vs. Frequency Gain and Efficiency Vs Output Power (F=30GHz) ...

Page 5

High Gain Buffer Amplifier Typical Scattering Parameters (on Wafer) Bias conditions: Vd=3.5V Vg=0V Freq. S11 S11 GHz dB /° 15 -18.37 116.1 16 -19.49 113.8 17 -20.63 113.4 18 -22.15 114.4 19 -24.36 120.5 20 -26.49 140.0 21 -24.05 ...

Page 6

CHA2098b Chip Assembly and Mechanical Data IN To Vgs1 DC Gate supply feed Note : Supply feed should be capacitively bypassed. 550 520 240 420 ( Chip thickness : 100µm. All dimensions are in micrometers ) Ref. : DSCHA20981233 21-August-01 ...

Page 7

High Gain Buffer Amplifier Typical Bias Tuning The circuit schematic is given below : IN For typical operation, the three drain biases are connected altogether same way, all the gate biases are connected together at the same ...

Page 8

... Ordering Information Chip form : CHA2098b99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S ...

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