CHA2092B99F/00 UMS [United Monolithic Semiconductors], CHA2092B99F/00 Datasheet

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CHA2092B99F/00

Manufacturer Part Number
CHA2092B99F/00
Description
18-32GHz Low Noise Amplifier
Manufacturer
UMS [United Monolithic Semiconductors]
Datasheet

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Part Number:
CHA2092B99F/00
Quantity:
37
Description
The CHA2092 is a high gain broadband three-
stage monolithic low noise amplifier. It is
designed for a wide range of applications, from
military
systems. The backside of the chip is both RF
and DC ground. This helps simplify the assembly
process. Self biasing technique is implemented
on chip to ease the circuit biasing.
The circuit is manufactured with a P-HEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
■ Broadband performances : 18-32GHz
■ 2.5dB Noise Figure
■ 10dBm output power ( -1dB gain comp. )
■ 22dB 1.0dB gain
■ Low DC power consumption, 60mA @ 3.5V
■ Chip size :
Main Characteristics
Tamb. = 25°C
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Symbol
Ref. : DSCHA20921233 21-August-01
P1dB
Fop
NF
G
Id
to
Operating frequency range
Small signal gain
Noise figure (20-32GHz)
Output power at 1dB gain compression
Bias current
1.67 X 0.97 X 0.10 mm
commercial
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
18-32GHz Low Noise Amplifier
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
GaAs Monolithic Microwave IC
United Monolithic Semiconductors S.A.S.
Parameter
communication
1/6
IN
Specifications subject to change without notice
30
25
20
15
10
5
0
15 17 19 21 23 25 27 29 31 33 35
Vgs1
Min
18
17
8
Frequency (GHz)
Typ
2.5
22
10
60
Vgs2,3
CHA2092b
Vds
Max
100
3.5
32
8831
Unit
GHz
dBm
mA
dB
dB
OUT

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CHA2092B99F/00 Summary of contents

Page 1

Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2092 is a high gain broadband three- stage monolithic low noise amplifier designed for a wide range of applications, from military to commercial systems. The backside of the ...

Page 2

CHA2092b Electrical Characteristics Tamb = +25°C, Vds = 3.5V; Ids=60mA Symbol Parameter Fop Operating frequency range (1) G Small signal gain (1) Small signal gain flatness (1) G Gain flatness over 40MHz Gsb Is Reverse isolation (1) P1dB Output power ...

Page 3

Low Noise Amplifier Typical Results Tamb=25°C 25,00 24,00 23,00 22,00 21,00 20,00 19,00 18,00 17,00 16,00 15,00 17,00 19,00 Gain and NF vs Frequency (Vdd=3.5V; Ids=60mA Gain vs Frequency and Vgs1 ...

Page 4

CHA2092b Gain vs Frequency and Vgs123 (Vdd=3.5V -10 -12 -14 -16 20,00 21,00 22,00 dBS11 vs Frequency and Vgs1 (Vdd=3.5V; Vgs23=-0.3V) 120,0 100,0 80,0 60,0 40,0 20,0 - -0,70 -0,65 Ref. : DSCHA20921233 21-August-01 Route ...

Page 5

Low Noise Amplifier Chip Assembly and Mechanical Data IN To Vgs DC Gate supply feed to ajust NF. Note : Supply feed should be capacitively bypassed. 385 325 920 ( Chip thickness : 100µm. All dimensions are in micrometers ...

Page 6

... Ordering Information Chip form : CHA2092b99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S ...

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