H2216 HUASHAN [SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD], H2216 Datasheet
H2216
Manufacturer Part Number
H2216
Description
NPN SILICON TRANSISTOR
Manufacturer
HUASHAN [SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD]
Datasheet
1.H2216.pdf
(3 pages)
█ APPLICATIONS
█ ABSOLUTE MAXIMUM RATINGS（T
█ ELECTRICAL CHARACTERISTICS（T
BV
BV
BV
I
I
H
V
V
Cob
f
Gpe
T
T
P
V
V
V
I
Ie——Emitter Current…………………………………………-50mA
CBO
EBO
T
Symbol
C
C
stg
j
FE
CE(sat）
BE(sat)
CBO
CEO
EB O
——Collector Current…………………………………………50mA
——Juncttion Temperature…………………………………150℃
——Collector Dissipation…………………………………300mW
TV FINAL PICTURE IF AMPLIFIER APPLICATIONS.
CBO
CEO
EBO
——Storage Temperature………………………… -55~150℃
——Collector-Base Voltage………………………………50V
——Collector-Emitter Voltage……………………………45V
——Emitter-Base Voltage………………………………4V
Shantou Huashan Electronic Devices Co.,Ltd.
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter- Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
Base- Emitter Saturation Voltage
Output Capacacitance
Current Gain-Bandwidth Product
Power Gain（Fig）
Characteristics
Min
300
0.8
50
45
40
29
4
a
=25℃）
Typ
a
=25℃）
Max
140
0.1
0.1
0.2
1.5
2.0
36
MHz V
N P N S I L I C O N T R A N S I S T O R
μA
μA
Unit
pF
dB
V
V
V
V
V
TO-92
H2216
I
I
I
V
V
V
I
I
V
Vcc=12.5V, I
f=45MHz
C
C
E
C
C
CB
EB
CE
CB
CE
=100μA，I
=100μA，I
=10mA，I
=15mA, I
=15mA,I
1―Base，B
2―Emitter，E
3―Collector， C
=3V, I
=12.5V, I
=12.5V, I
=30V, I
=10V,I
Test Conditions
C
E
B
=0
E
B
=0，f=30MHz
=1.5mA
=0
B
=1.5mA
E
C
C
=0
=-12.5mA,
C
=12.5mA
=12.5mA
E
=0
=0
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H2216 Summary of contents
Page 1
... Collector- Emitter Saturation Voltage CE(sat） V Base- Emitter Saturation Voltage BE(sat) Cob Output Capacacitance f Current Gain-Bandwidth Product T Gpe Power Gain（Fig） H2216 =25℃） a TO-92 =25℃） a Min Typ Max Unit ...
Page 2
... Shantou Huashan Electronic Devices Co.,Ltd. H2216 ...
Page 3
... Shantou Huashan Electronic Devices Co.,Ltd. H2216 ...