MT48LC64M4A2 Micron Technology, MT48LC64M4A2 Datasheet - Page 36

• Manufacturer Part Number: MT48LC64M4A2
• Description: (MT48Lxxxx) SYNCHRONOUS DRAM
• Manufacturer: Micron Technology

ABSOLUTE MAXIMUM RATINGS*
Voltage on V
Voltage on Inputs, NC or I/O Pins
Operating Temperature,
Operating Temperature,
Storage Temperature (plastic) ............ -55°C to +150°C
Power Dissipation ........................................................ 1W
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(Notes: 1, 5, 6; notes appear on page 37); (V
I
(Notes: 1, 5, 6, 11, 13; notes appear on page 37); (V
256Mb: x4, x8, x16 SDRAM
256MSDRAM_E.p65 – Rev. E; Pub. 3/02
PARAMETER/CONDITION
Operating Current: Active Mode;
Burst = 2; READ or WRITE;
Standby Current: Power-Down Mode;
All banks idle; CKE = LOW
Standby Current: Active Mode;
CKE = HIGH; CS# = HIGH; All banks active after
No accesses in progress
Operating Current: Burst Mode; Continuous burst;
READ or WRITE; All banks active
Auto Refresh Current
CS# = HIGH; CKE = HIGH
SELF REFRESH CURRENT: CKE 0.2V
DD
PARAMETER/CONDITION
Supply Voltage
Input High Voltage: Logic 1; All inputs
Input Low Voltage: Logic 0; All inputs
Input Leakage Current: Any input 0V
(All other pins not under test = 0V)
Output Leakage Current: DQs are disabled;
0V V
Output Levels:
Output High Voltage (I
Output Low Voltage (I
T
T
SPECIFICATIONS AND CONDITIONS
A
A
Relative to V
Relative to V
(commercial) ....................................... 0°C to +70°C
(industrial “IT”) ............................. -40°C to +85°C
OUT
DD
V
, V
DD
Q
DD
SS
SS
Q Supply
....................................... -1V to +4.6V
....................................... -1V to +4.6V
OUT
OUT
t
RC =
= 4mA)
= -4mA)
t
RC (MIN)
V
t
t
Standard
Low power (L)
IN
RFC =
RFC = 7.81 µs
DD
V
, V
DD
t
RCD met;
DD
t
RFC (MIN)
Q = +3.3V ±0.3V)
DD
, V
36
DD
Q = +3.3V ±0.3V)
*Stresses greater than those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only, and functional
operation of the device at these or any other conditions
above those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
V
SYMBOL
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
V
V
V
, V
V
I
OZ
I
OH
OL
IH
I
IL
DD
SYMBOL -7E
Q
I
I
I
I
I
I
I
I
DD
DD
DD
DD
DD
DD
DD
DD
1
2
3
4
5
6
7
7
256Mb: x4, x8, x16
MIN
-0.3
2.4
-5
-5
3
2
–
135
135
285
2.5
1.5
40
3.5
2
MAX
V
DD
MAX
3.6
0.8
0.4
125
135
270
5
5
–
-75 UNITS NOTES
+ 0.3
3.5
2.5
1.5
40
2
UNITS NOTES
©2002, Micron Technology, Inc.
mA
mA
mA
mA
mA
mA
mA
mA
SDRAM
µA
µA
V
V
V
V
V
19, 32
19, 32
19, 32
18, 19,
32, 33
3, 18,
3, 12,
3, 18,
3, 12,
32
4
22
22