MT4C1M16E5 Micron Technology, MT4C1M16E5 Datasheet

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MT4C1M16E5

Manufacturer Part Number
MT4C1M16E5
Description
EDO DRAM
Manufacturer
Micron Technology
Datasheet

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MT4C1M16E5DJ-5
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MT4C1M16E5DJ-6
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Part Number:
MT4C1M16E5TG-5S
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MIC
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700
EDO DRAM
FEATURES
• JEDEC- and industry-standard x16 timing,
• High-performance CMOS silicon-gate process
• Single power supply (+3.3V ±0.3V or 5V ±10%)
• All inputs, outputs and clocks are TTL-compatible
• Refresh modes: RAS#-ONLY, CAS#-BEFORE-RAS#
• BYTE WRITE access cycles
• 1,024-cycle refresh (10 row, 10 column addresses)
• Extended Data-Out (EDO) PAGE MODE access
• 5V-tolerant inputs and I/Os on 3.3V devices
OPTIONS
• Voltages
• Refresh Addressing
• Packages
• Timing
• Refresh Rates
• Operating Temperature Range
NOTE: 1. The third field distinguishes the low voltage offering: LC desig-
KEY TIMING PARAMETERS
1 Meg x 16 EDO DRAM
D52_B.p65 – Rev. B; Pub. 3/01
SPEED
functions, pinouts, and packages
(CBR), HIDDEN; optional self refresh (S)
3.3V
5V
1,024 (1K) rows
Plastic SOJ (400 mil)
Plastic TSOP (400 mil)
50ns access
60ns access
Standard Refresh (16ms period)
Self Refresh (128ms period)
Commercial (0
Extended (-20
-5
-6
2. Available only on MT4LC1M16E5 (3.3V)
nates Vcc = 3.3V and C designates Vcc = 5V.
104ns
84ns
t
RC
1
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.
MT4LC1M16E5TG-6
o
o
t
C to +80
50ns
60ns
RAC
C to +70
Part Number Example:
20ns
25ns
t
o
PC
o
C)
C)
25ns
30ns
t
AA
t
15ns
17ns
MARKING
CAC
None
None
TG
LC
ET
E5
DJ
S
-5
-6
C
2
t
10ns
CAS
8ns
1
MT4C1M16E5 – 1 Meg x 16, 5V
MT4LC1M16E5 – 1 Meg x 16, 3.3V
For the latest data sheet, please refer to the Micron Web
site:
1 MEG x 16 EDO DRAM PART NUMBERS
NOTE: “-x” indicates speed grade marking under timing
GENERAL DESCRIPTION
memory containing 16,777,216 bits organized in a x16
configuration. The 1 Meg x 16 has both BYTE WRITE
and WORD WRITE access cycles via two CAS# pins
(CASL# and CASH#). These function like a single CAS#
found on other DRAMs in that either CASL# or CASH#
will generate an internal CAS#.
the first CAS# (CASL# or CASH#) to transition LOW and
the last CAS# to transition back HIGH. Using only one
RAS#
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
WE#
V
V
V
NOTE: The "#" symbol indicates signal is active LOW.
PART NUMBER
MT4LC1M16E5DJ-x
MT4LC1M16E5DJ-x S
MT4LC1M16E5TG-x
MT4LC1M16E5TG-x S
MT4C1M16E5DJ-x
MT4C1M16E5TG-x
NC
NC
NC
NC
NC
A0
A1
A2
A3
CC
CC
CC
The 1 Meg x 16 is a randomly accessed, solid-state
The CAS# function and timing are determined by
44/50-Pin TSOP
www.micron.com/products/datasheets/sdramds.html
1
2
3
4
5
6
7
8
9
10
11
15
16
17
18
19
20
21
22
23
24
25
options.
PIN ASSIGNMENT (Top View)
50
49
48
47
46
45
44
43
42
41
40
36
35
34
33
32
31
30
29
28
27
26
3.3V
3.3V
3.3V
3.3V
Vcc REFRESH PACKAGE REFRESH
5V
5V
V
DQ15
DQ14
DQ13
DQ12
V
DQ11
DQ10
DQ9
DQ8
NC
NC
CASL#
CASH#
OE#
A9
A8
A7
A6
A5
A4
V
16Mb: 1 MEG x16
SS
SS
SS
RAS#
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
WE#
1K
1K
1K
1K
1K
1K
V
V
V
NC
NC
NC
NC
A0
A1
A2
A3
CC
CC
CC
42-Pin SOJ
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
EDO DRAM
400-TSOP Standard
400-TSOP
400-TSOP Standard
400-SOJ
400-SOJ
400-SOJ
©2001, Micron Technology, Inc
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
Standard
Standard
V
DQ15
DQ14
DQ13
DQ12
V
DQ11
DQ10
DQ9
DQ8
NC
CASL#
CASH#
OE#
A9
A8
A7
A6
A5
A4
V
Self
Self
SS
SS
SS

Related parts for MT4C1M16E5

MT4C1M16E5 Summary of contents

Page 1

... Meg x 16 EDO DRAM D52_B.p65 – Rev. B; Pub. 3/01 PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE. MT4C1M16E5 – 1 Meg x 16, 5V MT4LC1M16E5 – 1 Meg x 16, 3.3V For the latest data sheet, please refer to the Micron Web site: www.micron.com/products/datasheets/sdramds.html ...

Page 2

... The DQs remain High-Z until the next CAS# cycle until the next CAS# cycle OEHC is met. if OEP is met. Micron Technology, Inc., reserves the right to change products or specifications without notice. COLUMN (D) VALID DATA (D) DON’T CARE UNDEFINED ©2001, Micron Technology, Inc ...

Page 3

... The DQs go to High-Z if WE# falls, and if WPZ is met, will remain High-Z until CAS# goes LOW with WE# HIGH (i.e., until a READ cycle is initiated). Figure 2 WE# Control of DQs 3 Micron Technology, Inc., reserves the right to change products or specifications without notice. 16Mb: 1 MEG x16 EDO DRAM COLUMN (C) VALID DATA (B) INPUT DATA (C) t ...

Page 4

... LOWER BYTE WRITE INPUT INPUT STORED DATA DATA DATA ADDRESS 1 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc ...

Page 5

... SENSE AMPLIFIERS 1,024 x 1,024 1,024 5 16Mb: 1 MEG x16 EDO DRAM DATA-IN BUFFER DATA-OUT BUFFER 16 16 I/O GATING 1,024 x 16 MEMORY ARRAY Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc DQ0 16 DQ15 OE ...

Page 6

... V 2 5.5V 16Mb: 1 MEG x16 EDO DRAM 3.3V 5V MAX MIN MAX 3.6 4.5 5.5 5.5 2 0.8 -0.5 0 – 2.4 – – 0.4 – 0 Micron Technology, Inc., reserves the right to change products or specifications without notice. UNITS NOTES µ µA ©2001, Micron Technology, Inc ...

Page 7

... I -5 180 180 170 170 I ALL 300 300 ALL 300 300 8 CC Micron Technology, Inc., reserves the right to change products or specifications without notice. UNITS NOTES mA µA µ µ µ ©2001, Micron Technology, Inc ...

Page 8

... OEH 8 t OEHC 5 t OEP 5 t OES 4 t OFF Micron Technology, Inc., reserves the right to change products or specifications without notice. EDO DRAM MAX UNITS NOTES ...

Page 9

... WCR 38 t WCS 0 t WHZ WPZ 10 t WRH 8 t WRP 8 9 Micron Technology, Inc., reserves the right to change products or specifications without notice. EDO DRAM -6 MAX UNITS NOTES 10,000 ns 60 ...

Page 10

... RCD was greater than the specified t t CAC ( RAC [MIN] no longer applied). With RCD limit, AA and t t RCH or RRH must be satisfied for a READ Micron Technology, Inc., reserves the right to change products or specifications without notice. t RCD is t RAD t RAD (MAX RAC, and CAC t RCD t ...

Page 11

... D52_B.p65 – Rev. B; Pub. 3/01 16Mb: 1 MEG x16 31.Last CAS LOW. 32.A HIDDEN REFRESH may also be performed after a WRITE cycle. In this case, WE# is LOW and OE# is HIGH. 11 Micron Technology, Inc., reserves the right to change products or specifications without notice. EDO DRAM ©2001, Micron Technology, Inc ...

Page 12

... Micron Technology, Inc., reserves the right to change products or specifications without notice. ROW DON’T CARE UNDEFINED -6 MAX UNITS 10,000 ©2001, Micron Technology, Inc ...

Page 13

... Micron Technology, Inc., reserves the right to change products or specifications without notice. ROW DON’T CARE UNDEFINED -6 MAX UNITS ns ns 10,000 ©2001, Micron Technology, Inc ...

Page 14

... Micron Technology, Inc., reserves the right to change products or specifications without notice. ROW MAX UNITS 10,000 ©2001, Micron Technology, Inc ...

Page 15

... Micron Technology, Inc., reserves the right to change products or specifications without notice ROW t RCH t RRH t OFF VALID OPEN DATA t OD DON’T CARE UNDEFINED -6 MAX UNITS ...

Page 16

... Micron Technology, Inc., reserves the right to change products or specifications without notice ROW DON’T CARE UNDEFINED MAX UNITS 125,000 ©2001, Micron Technology, Inc ...

Page 17

... Micron Technology, Inc., reserves the right to change products or specifications without notice ROW t RWL t CWL OPEN DON’T CARE UNDEFINED -6 MAX UNITS ...

Page 18

... Micron Technology, Inc., reserves the right to change products or specifications without notice ROW DON’T CARE UNDEFINED -6 MAX UNITS 125,000 ...

Page 19

... Micron Technology, Inc., reserves the right to change products or specifications without notice. COLUMN t CLZ DON’T CARE UNDEFINED MAX UNITS ©2001, Micron Technology, Inc ...

Page 20

... RAS t CSR t CHR t WRP t WRH DON’T CARE UNDEFINED -5 MIN MAX MIN 50 10,000 60 84 104 Micron Technology, Inc., reserves the right to change products or specifications without notice. ROW -6 MAX UNITS 10,000 ©2001, Micron Technology, Inc ...

Page 21

... MIN MAX 10,000 60 10,000 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc t OFF OPEN DON’T CARE UNDEFINED UNITS ...

Page 22

... NOTE 1 t RPS NOTE 2 t RPC ( ( ) ) WRP t WRH -5 -6 MIN MAX MIN 105 Micron Technology, Inc., reserves the right to change products or specifications without notice. DON’T CARE UNDEFINED MAX UNITS ©2001, Micron Technology, Inc ...

Page 23

... MAX MIN 23 16Mb: 1 MEG x16 EDO DRAM SEE DETAIL A .467 (11.86) .459 (11.66) .007 (0.18) .005 (0.13) .004 (0.10) SEATING PLANE .008 (0.20) .002 (0.05) .032 (0.80) DETAIL A Micron Technology, Inc., reserves the right to change products or specifications without notice. .010 (0.25) .024 (0.60) .016 (0.40) TYP ©2001, Micron Technology, Inc ...

Page 24

... S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 E-mail: prodmktg@micron.com, Internet: http://www.micron.com, Customer Comment Line: 800-932-4992 Micron is a registered trademark and the Micron logo and the M logos are trademarks of Micron Technology, Inc. 1 Meg x 16 EDO DRAM D52_B.p65 – Rev. B; Pub. 3/01 42-PIN PLASTIC SOJ (400 mil) 1 ...

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