M29DW323DB ST Microelectronics, M29DW323DB Datasheet
![no-image](/images/no-image-200.jpg)
M29DW323DB
Available stocks
Related parts for M29DW323DB
M29DW323DB Summary of contents
Page 1
... LOW POWER CONSUMPTION – Standby and Automatic Standby 100,000 PROGRAM/ERASE CYCLES per BLOCK ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – Top Device Code M29DW323DT: 225Eh – Bottom Device Code M29DW323DB: 225Fh June 2003 M29DW323DT M29DW323DB 3V Supply Flash Memory Figure 1. Packages TSOP48 (N) ...
Page 2
... M29DW323DT, M29DW323DB TABLE OF CONTENTS SUMMARY DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Figure 2. Logic Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Table 1. Signal Names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Figure 3. TSOP Connections Figure 4. TFBGA63 Connections (Top view through package Figure 5. TFBGA48 Connections (Top view through package Table 2. Bank Architecture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Figure 6. Block Addresses (x8 Figure 7. Block Addresses (x16 SIGNAL DESCRIPTIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Address Inputs (A0-A20) ...
Page 3
... Figure 14. Write AC Waveforms, Chip Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Table 15. Write AC Characteristics, Chip Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Figure 15. Reset/Block Temporary Unprotect AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Table 16. Reset/Block Temporary Unprotect AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Figure 16. Accelerated Program Timing Waveforms PACKAGE MECHANICAL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Figure 17. TSOP48 Lead Plastic Thin Small Outline, 12x20 mm, Bottom View Package Outline . 29 M29DW323DT, M29DW323DB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3/49 ...
Page 4
... PART NUMBERING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Table 20. Ordering Information Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 APPENDIX A. BLOCK ADDRESSES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 Table 21. Top Boot Block Addresses, M29DW323DT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 Table 22. Bottom Boot Block Addresses, M29DW323DB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 APPENDIX B. COMMON FLASH INTERFACE (CFI Table 23. Query Structure Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 Table 24. CFI Query Identification String . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 Table 25. CFI Query System Interface Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 Table 26 ...
Page 5
... The bank architecture is summarized in Table 2. M29DW323DT locates the Parameter Blocks at the top of the memory ad- dress space while the M29DW323DB locates the Parameter Blocks starting from the bottom. M29DW323D has an extra 32 KWord (x16 mode KByte (x8 mode) block, the Extended Block, that can be accessed using a dedicated com- mand ...
Page 6
... M29DW323DT, M29DW323DB Figure 3. TSOP Connections V PP /WP 6/49 A15 1 48 A14 A13 A12 A11 A10 A9 A8 A19 M29DW323DT A20 M29DW323DB A18 A17 A16 BYTE V SS DQ15A–1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 V CC ...
Page 7
... A6 A18 A20 A19 DQ2 DQ5 A0 DQ0 E DQ8 DQ10 DQ12 G DQ9 DQ11 DQ1 DQ3 DQ4 (1) NC (1) NC M29DW323DT, M29DW323DB (1) ( (1) ( A13 A8 A12 A10 A14 A11 A15 DQ7 A16 BYTE DQ14 DQ15 DQ13 A–1 DQ6 ...
Page 8
... M29DW323DT, M29DW323DB Figure 5. TFBGA48 Connections (Top view through package Table 2. Bank Architecture Bank Bank Size A 8 Mbit B 24 Mbit 8/ A17 A2 A6 A18 A20 A19 DQ2 DQ5 DQ0 A0 E DQ8 DQ10 ...
Page 9
... KByte or 4 KWord 3FFFFFh Note 1. Used as Extended Block Addresses in Extended Block mode. Note: Also see Appendix A, Tables 21 and 22 for a full listing of the Block Addresses. M29DW323DT, M29DW323DB Bottom Boot Block (x8) Address lines A20-A0, DQ15A-1 000000h 001FFFh Total of 48 Main Blocks ...
Page 10
... M29DW323DT, M29DW323DB Figure 7. Block Addresses (x16) Top Boot Block (x16) Address lines A20-A0 000000h 64 KByte or 32 KWord 007FFFh Bank B 178000h 64 KByte or 32 KWord 17FFFFh 180000h 64 KByte or 32 KWord 187FFFh 1F0000h 64 KByte or 32 KWord 1F7FFFh Bank A 1F8000h 8 KByte or 4 KWord 1F8FFFh 1FF000h ...
Page 11
... PHPHH Ready/Busy Output (RB). The Ready/Busy pin is an open-drain output that can be used to identify , the memory IL when the device is performing a Program or Erase operation. During Program or Erase operations M29DW323DT, M29DW323DB /Write Protect is Low, even when /Write Protect is High /Write Protect is raised to V ...
Page 12
... M29DW323DT, M29DW323DB Ready/Busy is Low Ready/Busy is high-im- OL pedance during Read mode, Auto Select mode and Erase Suspend mode. After a Hardware Reset, Bus Read and Bus Write operations cannot begin until Ready/Busy be- comes high-impedance. See Table 16 and Figure 15, Reset/Temporary Unprotect AC Characteris- tics. The use of an open-drain output allows the Ready/ Busy pins from several memories to be connected to a single pull-up resistor ...
Page 13
... Block Protection Status or the Reset/Block Tem- porary Unprotect pin status. , the IH Block Protect and Chip Unprotect operations are described in Appendix D. M29DW323DT, M29DW323DB , Chip Enable should CC2 ± 0.2V. For the Standby current CC , for Program or Erase operations un- CC3 to be applied to some pins ...
Page 14
... 81h (factory locked 01h (not factory locked Data Inputs/Outputs DQ15A–1, DQ14-DQ0 Data Output Data Input Hi-Z Hi 0020h , 225Eh (M29DW323DT) ID 225Fh (M29DW323DB 81h (factory locked 01h (not factory locked DQ7-DQ0 Data Input Hi-Z Hi-Z 20h ...
Page 15
... Note that the Program command cannot change a bit set at ’0’ back to ’1’. One of the Erase Com mands must be used to set all the bits in a block or in the whole memory from ’0’ to ’1’. M29DW323DT, M29DW323DB . If the addressed block is protected then 15/49 ...
Page 16
... M29DW323DT, M29DW323DB Fast Program Commands There are two Fast Program commands available to improve the programming throughput, by writing several adjacent words or bytes in parallel. The Quadruple Byte Program command is available for x8 operations, while the Double Word Program command is available for x16 operations. Quadruple Byte Program Command. The Qua- druple Byte Program command is used to write a page of four adjacent Bytes in parallel ...
Page 17
... Read/Reset command which is only accepted during the 50µs time-out period. Typical block erase times are given in Table 7. M29DW323DT, M29DW323DB After the Erase operation has started all Bus Read operations to the Bank being erased will output the Status Register on the Data Inputs/Outputs. See the section on the Status Register for more details ...
Page 18
... M29DW323DT, M29DW323DB Enter Extended Block Command The M29DW323D has an extra 64KByte block (Extended Block) that can only be accessed using the Enter Extended Block command. Three Bus write cycles are required to issue the Extended Block command. Once the command has been is- ...
Page 19
... 555 55 AAA AA 555 55 AAA 555 55 AAA AA 555 55 AAA or DQ15 when BYTE M29DW323DT, M29DW323DB 3rd 4th 5th Data Add Data Add Data Add Data PD1 PA2 PD2 PA3 PD3 20 80 AAA AA 555 55 80 AAA AA ...
Page 20
... M29DW323DT, M29DW323DB STATUS REGISTER The M29DW323D has two Status Registers, one for each bank. The Status Registers provide infor- mation on the current or previous Program or Erase operations executed in each bank. The var- ious bits convey information and errors on the op- eration. Bus Read operations from any address within the Bank, always read the Status Register during Program and Erase operations ...
Page 21
... DQ6 DQ7 Toggle DQ7 Toggle DQ7 Toggle 0 Toggle 0 Toggle 0 Toggle 0 Toggle 0 Toggle 1 No Toggle 0 Toggle 0 Toggle Figure 9. Data Toggle Flowchart PASS AI90194 M29DW323DT, M29DW323DB DQ5 DQ3 DQ2 0 – – 0 – – 1 – – Toggle 0 0 Toggle Toggle 0 1 Toggle 0 ...
Page 22
... M29DW323DT, M29DW323DB MAXIMUM RATING Stressing the device above the rating listed in the Absolute Maximum Ratings table may cause per- manent damage to the device. Exposure to Abso- lute Maximum Rating conditions for extended periods may affect device reliability. These are stress ratings only and operation of the device at Table 9 ...
Page 23
... Input Capacitance IN C Output Capacitance OUT Note: Sampled only, not 100% tested. M29DW323DT, M29DW323DB Conditions summarized in Table 10, Operating and AC Measurement Conditions. Designers should check that the operating conditions in their circuit match the operating conditions when rely- ing on the quoted parameters. M29DW323D ...
Page 24
... M29DW323DT, M29DW323DB Table 12. DC Characteristics Symbol Parameter I Input Leakage Current LI I Output Leakage Current LO (2) Supply Current (Read) I CC1 I Supply Current (Standby) CC2 Supply Current (Program/ (1,2) I CC3 Erase) V Input Low Voltage IL V Input High Voltage IH V /WP Voltage for Acceleration V /WP ...
Page 25
... Note: 1. Sampled only, not 100% tested. tAVAV VALID tAVQV tELQV tELQX tGLQX tGLQV tBHQV tBLQZ Parameter Test Condition M29DW323DT, M29DW323DB tAXQX tEHQX tEHQZ tGHQX tGHQZ VALID M29DW323D Min Max ...
Page 26
... M29DW323DT, M29DW323DB Figure 13. Write AC Waveforms, Write Enable Controlled A0-A20/ A– DQ0-DQ7/ DQ8-DQ15 V CC tVCHEL RB Table 14. Write AC Characteristics, Write Enable Controlled Symbol Alt t t Address Valid to Next Address Valid AVAV Chip Enable Low to Write Enable Low ELWL Write Enable Low to Write Enable High ...
Page 27
... Program/Erase Valid to RB Low t BUSY EHRL High to Write Enable Low VCHWL VCS CC Note: 1. Sampled only, not 100% tested. tAVAV VALID tAVEL tWLEL tGHEL tELEH tDVEH Parameter M29DW323DT, M29DW323DB tELAX tEHWH tEHGL tEHEL tEHDX VALID tEHRL M29DW323D 70 Min 70 Min 0 Min 45 Min 45 Min 0 ...
Page 28
... M29DW323DT, M29DW323DB Figure 15. Reset/Block Temporary Unprotect AC Waveforms tPLPX RP Table 16. Reset/Block Temporary Unprotect AC Characteristics Symbol Alt (1) t PHWL RP High to Write Enable Low, Chip Enable Low PHEL RH Output Enable Low (1) t PHGL (1) t RHWL RB High to Write Enable Low, Chip Enable Low, ...
Page 29
... M29DW323DT, M29DW323DB inches Typ Min 0.0039 0.0020 0.0394 0.0374 0.0087 0.0067 0.0039 0.4724 0.4685 0.7874 0.7795 0.7244 0.7205 0.0197 – ...
Page 30
... M29DW323DT, M29DW323DB Figure 18. TFBGA63 7x11mm - 6x8 Ball Array, 0.8mm Pitch, Bottom View Package Outline BALL "A1" A Note: Drawing not to scale. Table 18. TFBGA63 7x11mm - 6x8 Ball Array, 0.8mm Pitch, Package Mechanical Data Symbol Typ 7.000 D1 5.600 ddd – ...
Page 31
... M29DW323DT, M29DW323DB ddd A2 BGA-Z32 inches Typ Min 0.0102 0.0138 0.2362 0.2323 0.1575 – 0.3150 0.3110 0.2205 – 0.0315 – 0.0394 – ...
Page 32
... M29DW323DT, M29DW323DB PART NUMBERING Table 20. Ordering Information Scheme Example: Device Type M29 Architecture D = Dual Bank Operating Voltage 2.7 to 3.6V CC Device Function 323D = 32 Mbit (x8/x16), Boot Block, 1/4-3/4 partitioning Array Matrix T = Top Boot B = Bottom Boot Speed Package N = TSOP48 TFBGA63 11mm, 0 ...
Page 33
... Protection Group 1A0000h–1AFFFFh 1B0000h–1BFFFFh 1C0000h–1CFFFFh 1D0000h–1DFFFFh Protection Group 1E0000h–1EFFFFh 1F0000h–1FFFFFh M29DW323DT, M29DW323DB (x16) 000000h–07FFFh 008000h–0FFFFh 010000h–17FFFh 018000h–01FFFFh 020000h–027FFFh 028000h–02FFFFh 030000h–037FFFh 038000h–03FFFFh 040000h–047FFFh 048000h– ...
Page 34
... M29DW323DT, M29DW323DB (Kbytes/ Block Kwords) 32 64/32 33 64/32 34 64/32 35 64/32 36 64/32 37 64/32 38 64/32 39 64/32 40 64/32 41 64/32 42 64/32 43 64/32 44 64/32 45 64/32 46 64/32 47 64/32 48 64/32 49 64/32 50 64/32 51 64/32 52 64/32 53 64/32 54 64/32 55 64/32 56 64/32 57 64/32 58 64/32 59 64/32 60 64/32 61 64/32 62 64/32 34/49 Protection Block (x8) Group 200000h–20FFFFh 210000h–21FFFFh Protection Group 220000h–22FFFFh 230000h–23FFFFh 240000h–24FFFFh 250000h–25FFFFh Protection Group 260000h–26FFFFh 270000h– ...
Page 35
... Protection Group 3F4000h–3F5FFFh Protection Group 3F6000h–3F7FFFh Protection Group 3F8000h–3F9FFFh Protection Group 3FA000h–3FBFFFh Protection Group 3FC000h–3FDFFFh Protection Group 3FE000h–3FFFFFh M29DW323DT, M29DW323DB (x16) (1) (1) 1F8000h–1F8FFFh (1) (1) 1F9000h–1F9FFFh (1) (1) 1FA000h–1FAFFFh (1) (1) 1FB000h–1FBFFFh ...
Page 36
... M29DW323DT, M29DW323DB Table 22. Bottom Boot Block Addresses, M29DW323DB (Kbytes/ Block Kwords) 0 8/4 1 8/4 2 8/4 3 8/4 4 8/4 5 8/4 6 8/4 7 8/4 8 64/32 9 64/32 10 64/32 11 64/32 12 64/32 13 64/32 14 64/32 15 64/32 16 64/32 17 64/32 18 64/32 19 64/32 20 64/32 21 64/32 22 64/32 23 64/32 24 64/32 25 64/32 26 64/32 27 64/32 28 64/32 29 64/32 30 64/32 36/49 Protection Block (x8) Group Protection Group 000000h-001FFFh Protection Group 002000h-003FFFh Protection Group 004000h-005FFFh Protection Group 006000h-007FFFh ...
Page 37
... Protection Group 57 64/32 58 64/32 59 64/32 60 64/32 Protection Group 61 64/32 62 64/32 M29DW323DT, M29DW323DB (x8) 180000h-18FFFFh 0C0000h–0C7FFFh 190000h-19FFFFh 0C8000h–0CFFFFh 1A0000h-1AFFFFh 0D0000h–0D7FFFh 1B0000h-1BFFFFh 0D8000h–0DFFFFh 1C0000h-1CFFFFh 0E0000h–0E7FFFh 1D0000h-1DFFFFh 0E8000h–0EFFFFh 1E0000h-1EFFFFh 0F0000h–0F7FFFh 1F0000h-1FFFFFh 0F8000h–0FFFFFh 200000h-20FFFFh 100000h–107FFFh 210000h-21FFFFh 108000h–10FFFFh 220000h-22FFFFh 110000h– ...
Page 38
... M29DW323DT, M29DW323DB (Kbytes/ Block Kwords) 63 64/32 64 64/32 65 64/32 66 64/32 67 64/32 68 64/32 69 64/32 70 64/32 Note: 1. Used as the Extended Block Addresses in Extended Block mode. 38/49 Protection Block (x8) Group 380000h-38FFFFh 390000h-39FFFFh Protection Group 3A0000h-3AFFFFh 3B0000h-3BFFFFh 3C0000h-3CFFFFh Protection Group 3D0000h-3DFFFFh 3E0000h-3EFFFFh Protection Group 3F0000h-3FFFFFh (x16) 1C0000h–1C7FFFh 1C8000h–1CFFFFh 1D0000h–1D7FFFh 1D8000h– ...
Page 39
... Address for Primary Algorithm extended Query table (see Table 27) Alternate Vendor Command Set and Control Interface ID Code second vendor - specified algorithm supported Address for Alternate Algorithm extended Query table M29DW323DT, M29DW323DB Description Command set ID and algorithm data offset Device timing & voltage information ...
Page 40
... Note: The region information contained in addresses 2Dh to 34h (or 5Ah to 68h) is correct for the M29DW323DB. For the M29DW323DT the regions must be reversed. 40/49 Description V Logic Supply Minimum Program/Erase voltage CC bit BCD value in volts ...
Page 41
... BCD value in 100 mV Top/Bottom Boot Block Flag 02h = Bottom Boot device, 03h = Top Boot device Data XXXX XXXX 64 bit: unique device number XXXX XXXX M29DW323DT, M29DW323DB Description Value "P" "R" "I" "1" "0" Yes ...
Page 42
... M29DW323DT, M29DW323DB APPENDIX C. EXTENDED MEMORY BLOCK The M29DW323D has an extra block, the Extend- ed Block, that can be accessed using a dedicated command. This Extended Block is 32 KWords in x16 mode and 64 KBytes in x8 mode used as a security block (to provide a permanent security identifica- tion number store additional information. ...
Page 43
... Pulse IL Others = A12-A20 Block Address IH Others = A12-A20 Block Address IH Others = X M29DW323DT, M29DW323DB Data Inputs/Outputs DQ15A–1, DQ14-DQ0 X , A15 = Pass = XX01h Retry = XX00h , Retry = XX01h ...
Page 44
... M29DW323DT, M29DW323DB Figure 20. Programmer Equipment Group Protect Flowchart Note: Block Protection Groups are shown in Appendix D, Tables 21 and 22. 44/49 START ADDRESS = GROUP ADDRESS Wait 4µ Wait 100µ A0 Wait 4µ ...
Page 45
... Wait 4µ Wait 10ms ADDRESS = CURRENT GROUP ADDRESS A1 Wait 4µ Wait 60ns Read DATA NO DATA YES = 00h ++n YES FAIL M29DW323DT, M29DW323DB INCREMENT CURRENT GROUP LAST NO GROUP YES PASS AI05575 45/49 ...
Page 46
... M29DW323DT, M29DW323DB Figure 22. In-System Equipment Group Protect Flowchart Note: Block Protection Groups are shown in Appendix D, Tables 21 and 22. 46/49 START WRITE 60h ADDRESS = GROUP ADDRESS WRITE 60h ADDRESS = GROUP ADDRESS Wait 100µs ...
Page 47
... WRITE 40h ADDRESS = CURRENT GROUP ADDRESS Wait 4µs READ DATA ADDRESS = CURRENT GROUP ADDRESS DATA = 00h ++n YES FAIL M29DW323DT, M29DW323DB INCREMENT CURRENT GROUP YES NO LAST GROUP YES ISSUE READ/RESET COMMAND PASS AI05577 47/49 ...
Page 48
... M29DW323DT, M29DW323DB REVISION HISTORY Table 31. Document Revision History Date Version 20-Sep-2001 -01 First Issue (Target Specification) 26-Oct-2001 -02 Document expanded to full Product Preview 16-Jan-2002 -03 Corrections made in “Primary Algorithm-Specific Extended Query” Table in Appendix-B Description of Ready/Busy signal clarified (and Figure 15 modified) Clarified allowable commands during block erase ...
Page 49
... India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. The ST logo is registered trademark of STMicroelectronics All other names are the property of their respective owners © 2003 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies www.st.com M29DW323DT, M29DW323DB 49/49 ...