TA8231LQ_06 TOSHIBA [Toshiba Semiconductor], TA8231LQ_06 Datasheet - Page 4

• Manufacturer Part Number: TA8231LQ_06
• Manufacturer: TOSHIBA [Toshiba Semiconductor]

Absolute Maximum Ratings
Electrical Characteristics
(unless otherwise specified V
Peak supply voltage (0.2s)
DC supply voltage
Operating supply voltage
Output current (peak)
Power dissipation
Operating temperature
Storage temperature
Quiescent current
Output power
Total harmonic distortion
Voltage gain
Voltage gain ratio
Output noise voltage
Ripple rejection ratio
Cross talk
Input resistance
Output offset voltage
Stand−by current
Characteristic
Characteristic
CC
(Ta = 25°C)
V
V
V
I
CC (surge)
Symbol
Symbol
V
V
O (peak)
P
P
P
P
V
CC (DC)
CC (opr)
= 13.2V, f = 1kHz, R
I
THD
∆G
R.R.
STBY
T
T
out (1)
out (2)
out (3)
out (4)
NO (1)
NO (2)
C.T.
I
R
P
G
offset
ccq
opr
stg
IN
D
V
V
Test
Cir−
cuit
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
−55~150
−30~85
Rating
50
25
18
50
9
4
V
V
R
THD = 10%, R
THD = 10%, R
THD = 1%, f = 20Hz~20kHz,
R
P
V
V
R
Noise Filter
R
f
V
R
R
V
V
Pin(1): GND
ripple
in
CC
L
L
out
out
out
g
g
out
g
g
out
in
= 2Ω
= 4Ω
= 0Ω, DIN45405
= 0Ω, BW = 20Hz~20kHz
= 600Ω
= 600Ω,
= 0
= 0
= 14.4V, THD = 10%,
= 4W
= 0.775V
= 0.775V
= 0.775V
= 0.775V
= 100Hz,
g
Condition
= 600Ω, Ta = 25°C)
Unit
°C
°C
W
V
V
V
A
rms
rms
rms
rms
L
L
―
= 2Ω
= 4Ω
(0dBm)
(0dBm)
(0dBm),
(0dBm)
−200
30.5
Min
28
19
−1
40
―
―
―
―
―
―
―
―
―
Typ.
0.02
0.07
0.06
150
100
42
37
22
17
32
60
60
30
0
0
TA8231LQ
2006-04-28
33.5
Max
250
200
150
0.2
0.1
―
―
―
―
―
―
―
―
1
mV
mV
Unit
mA
mV
dB
dB
dB
dB
kΩ
µA
W
W
W
W
%
rms
rms