MT46V16M8TG-8L MICRON [Micron Technology], MT46V16M8TG-8L Datasheet - Page 64

• Manufacturer Part Number: MT46V16M8TG-8L
• Description: DOUBLE DATA RATE DDR SDRAM
• Manufacturer: MICRON [Micron Technology]

128Mb: x4, x8, x16 DDR SDRAM
128Mx4x8x16DDR_C.p65 – Rev. C; Pub. 4/01
x4: A0-A9, A11
x16: A9, A11
COMMAND
x16: A0-A8
x8: A0-A9
BA0, BA1
Case 1:
Case 2:
x8: A11
NOTE: 1. DO n = data-out from column n; subsequent elements are provided in the programmed order.
DQS
DQ
DQS
DQ
CK#
CKE
A10
DM
CK
1
1
4
t
t
AC
AC
2. Burst length = 4 in the case shown.
3. Enable auto precharge.
4. ACT = ACTIVE, RA = Row Address, BA = Bank Address.
5. NOP commands are shown for ease of illustration; other commands may be valid at these times.
6. The READ command can only be applied at T3 if
7. Refer to figure 27, 27A, and 28 for detailed DQS and DQ timing.
(MIN)
(MAX)
t
and
t
IS
and
IS
NOP 5
T0
t
t
t
DQSCK
t
IH
DQSCK
IH
(MIN)
(MAX)
t
IS
Bank x
IS
ACT
RA
RA
T1
RA
IH
t
IH
t
CK
BANK READ – WITH AUTO PRECHARGE
t
t
RAP 6
RAS 6
t
RC
NOP 5
T2
t
CH
t
t
CL
RAP minimum is met,
t
READ 2,6
IS
Bank x
3
Col n
T3
t
IH
CL = 2
t
64
LZ
(MIN)
NOP 5
T4
t
t
RPRE
RAP
t
LZ
_ >
(MIN)
t
t
RPRE
Micron Technology, Inc., reserves the right to change products or specifications without notice.
RCD.
NOP 5
T5
DO
t
DQSCK
n
t
DQSCK
DO
t
n
AC
T5n
t
AC
(MIN)
(MIN)
(MAX)
128Mb: x4, x8, x16
(MAX)
t
RP
NOP 5
T6
T6n
t
t
HZ
RPST
DDR SDRAM
t
(MAX)
RPST
NOP 5
PRELIMINARY
T7
TRANSITIONING DATA
DON’T CARE
©2001, Micron Technology, Inc.
Bank x
T8
ACT
RA
RA
RA