M29W640FB STMICROELECTRONICS [STMicroelectronics], M29W640FB Datasheet - Page 60

• Manufacturer Part Number: M29W640FB
• Description: 64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

9 Part Numbering
Table 25.
1. For Bottom Boot devices, Erase Block Region 1 is located from address 000000h to 007FFFh and Erase Block Region 2
60/72
from address 008000h to 3FFFFFh.
For Top Boot devices, Erase Block Region 1 is located from address 000000h to 3F7FFFh and Erase Block Region 2 from
address 3F8000h to 3FFFFFh.
2Ch
2Dh
3Ch
2Ah
2Bh
2Eh
2Fh
3Ah
3Bh
x16
27h
28h
29h
30h
31h
32h
33h
34h
35h
36h
37h
38h
39h
Address
Device Geometry Definition
4Eh
5Ah
5Ch
5Eh
6Ah
6Ch
6Eh
50h
52h
54h
56h
58h
60h
62h
64h
66h
68h
70h
72h
74h
76h
78h
x8
007Eh
0017h
0002h
0000h
0004h
0000h
0002h
0007h
0000h
0020h
0000h
0000h
0000h
0001h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
Data
Device Size = 2
Flash Device Interface Code description
Maximum number of bytes in multi-byte program or page = 2
Number of Erase Block Regions. It specifies the number of
regions containing contiguous Erase Blocks of the same size.
Region 1 Information
Number of Erase Blocks of identical size = 0007h+1
Region 1 Information
Block size in Region 1 = 0020h * 256 byte
Region 2 Information
Number of Erase Blocks of identical size= 007Eh+1
Region 2 Information
Block size in Region 2 = 0100h * 256 byte
Region 3 Information
Number of Erase Blocks of identical size=007Fh+1
Region 3 Information
Block size in Region 3 = 0000h * 256 byte
Region 4 Information
Number of Erase Blocks of Identical size=007Fh+1
Region 4 Information
Block size in Region 4 = 0000h * 256 byte
n
in number of bytes
Description
M29W640FT, M29W640FB
n
16 Bytes
8 MByte
64Kbyte
x8, x16
8Kbyte
Async.
Value
127
2
8
0
0
0
0