M29W800DB STMICROELECTRONICS [STMicroelectronics], M29W800DB Datasheet - Page 33

• Manufacturer Part Number: M29W800DB
• Description: 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

Table 25. CFI Query System Interface Information
Note: 1. Not supported in the CFI
1Ch
1Dh
1Bh
1Eh
1Fh
x16
20h
21h
22h
23h
24h
25h
26h
Address
3Ch
4Ch
3Ah
3Eh
4Ah
36h
38h
40h
42h
44h
46h
48h
x8
000Ah
0027h
0036h
0000h
0000h
0004h
0000h
0000h
0004h
0000h
0003h
0000h
Data
V
V
V
V
Typical timeout per single byte/word program = 2
Typical timeout for minimum size write buffer program = 2
Typical timeout per individual block erase = 2
Typical timeout for full chip erase = 2
Maximum timeout for byte/word program = 2
Maximum timeout for write buffer program = 2
Maximum timeout per individual block erase = 2
Maximum timeout for chip erase = 2
CC
CC
PP
PP
bit 7 to 4
bit 3 to 0
bit 7 to 4
bit 3 to 0
[Programming] Supply Minimum Program/Erase voltage
[Programming] Supply Maximum Program/Erase voltage
Logic Supply Minimum Program/Erase voltage
Logic Supply Maximum Program/Erase voltage
BCD value in volts
BCD value in 100 mV
BCD value in volts
BCD value in 100 mV
Description
n
n
times typical
ms
n
n
n
times typical
M29W800DT, M29W800DB
ms
times typical
n
n
times typical
µs
n
µs
see note (1)
see note (1)
256µs
Value
16µs
2.7V
3.6V
NA
NA
NA
NA
1s
8s
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