CAT28F512 CATALYST [Catalyst Semiconductor], CAT28F512 Datasheet - Page 5

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CAT28F512

Manufacturer Part Number
CAT28F512
Description
512K-Bit CMOS Flash Memory
Manufacturer
CATALYST [Catalyst Semiconductor]
Datasheet

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Preliminary
A.C. CHARACTERISTICS, Read Operation
V
Figure 1. A.C. Testing Input/Output Waveform
Figure 2. A.C. Testing Load Circuit (example)
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) Output floating (High-Z) is defined as the state where the external data line is no longer driven by the output buffer.
(3) Input Rise and Fall Times (10% to 90%) < 10 ns.
(4) Input Pulse Levels = 0.45V and 2.4V.
(5) Input and Output Timing Reference = 0.8V and 2.0V.
(6) Low-Z is defined as the state where the external data may be driven by the output buffer but may not be valid.
SUPPLY CHARACTERISTICS
Symbol
t
t
t
t
t
t
t
t
t
t
CC
JEDEC Standard
AVAV
ELQV
AVQV
GLQV
AXQX
GLQX
ELQX
GHQZ
EHQZ
WHGL
Symbol
= +5V 10%, unless otherwise specified.
V
V
V
0.45 V
(1)
2.4 V
CC
PPL
PPH
Symbol
t
t
t
t
t
t
t
t
t
-
RC
CE
ACC
OE
OH
OLZ
LZ
DF
DF
(1)(6)
(1)(2)
(1)(2)
(1)(6)
INPUT PULSE LEVELS
Read Cycle Time
CE Access Time
Address Access Time
OE Access Time
Output Hold from Address OE/CE Change
OE to Output in Low-Z
CE to Output in Low-Z
OE High to Output High-Z
CE High to Output High-Z
Write Recovery Time Before Read
V
V
V
CC
PP
PP
During Read Operations
During Read/Erase/Program
Supply Voltage
Parameter
DEVICE
UNDER
Parameter
TEST
(3)(4)(5)
1.3V
5
2.0 V
0.8 V
1N914
3.3K
C L = 100 pF
Min. Max.
28F512-90
11.4
90
Min
4.5
0
0
0
6
0
C L INCLUDES JIG CAPACITANCE
OUT
REFERENCE POINTS
90
90
35
20
30
Limits
120
Min. Max. Min. Max. Unit
28F512-12 28F512-15
0
0
0
6
Max.
12.6
5.5
6.5
120
120
40
50
30
150
Doc. No. 25042-00 2/98 F-1
0
0
0
6
CAT28F512
150
150
Unit
55
35
45
V
V
V
5096 FHD F03
5108 FHD F04
ns
ns
ns
ns
ns
ns
ns
ns
ns
s

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