CAT28F512 CATALYST [Catalyst Semiconductor], CAT28F512 Datasheet - Page 7

• Manufacturer Part Number: CAT28F512
• Description: 512K-Bit CMOS Flash Memory
• Manufacturer: CATALYST [Catalyst Semiconductor]

FUNCTION TABLE
Preliminary
WRITE COMMAND TABLE
Commands are written into the command register in one or two write cycles. The command register can be altered
only when V
addresses and data required for programming and erase operations.
Note:
(1) Logic Levels: X = Logic ‘Do not care’ (V
Set Read
Read Sig. (MFG)
Read Sig. (Device)
Erase
Erase Verify
Program
Program Verify
Reset
Read
Output Disable
Standby
Signature (MFG)
Signature (Device)
Program/Erase
Write Cycle
Read Cycle
Mode
Mode
PP
is high and the instruction byte is latched on the rising edge of WE. Write cycles also internally latch
(1)
Operation
CE
V
Write
Write
Write
Write
Write
Write
Write
Write
V
V
V
V
V
V
V
IH
IL
IL
IL
IL
IL
IL
IL
IH
First Bus Cycle
, V
IL
, V
OE
V
V
V
V
V
V
V
Address
X
PPL
IH
IH
IH
IL
IL
IL
IL
A
, V
X
X
X
X
X
X
X
IN
PPH
)
Pins
WE
V
V
V
V
V
V
V
X
IH
IH
IH
IH
IH
IL
IL
7
C0H
00H
90H
90H
20H
A0H
40H
FFH
D
IN
V
V
V
Operation
V
V
V
Pins
PPH
PPH
PPH
PPL
X
PPL
X
X
PP
Read
Read
Read
Write
Read
Write
Read
Write
High-Z
High-Z
D
D
B8H
31H
D
D
Second Bus Cycle
I/O
OUT
OUT
IN
IN
Address
A
A
00
01
X
X
X
X
IN
IN
A
A
See Command Table
During Write Cycle
During Write Cycle
0
0
= V
= V
FFH
20H
D
D
IL
IH
Doc. No. 25042-00 2/98 F-1
Notes
IN
, A
IN
, A
9
CAT28F512
9
= 12V
= 12V
D
D
D
D
B8H
31H
OUT
OUT
OUT
OUT