B100NH02L STMICROELECTRONICS [STMicroelectronics], B100NH02L Datasheet - Page 5
B100NH02L
Manufacturer Part Number
B100NH02L
Description
N-CHANNEL 24V - 0.0052ohm - 60A D2PAK STripFET TM III POWER MOSFET
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
1.B100NH02L.pdf
(13 pages)
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STB100NH02L
Table 5.
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Symbol
I
V
SDM
I
SD
RRM
I
Q
SD
t
rr
rr
(2)
(1)
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
I
I
V
(see
SD
SD
DD
= 30A, V
= 60A, di/dt = 100A/µs,
= 16V, T
Figure
Test conditions
15)
GS
j
= 150°C
= 0
Min.
Electrical characteristics
Typ.
35
35
2
Max.
240
1.3
60
Unit
nC
ns
A
A
V
A
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