BGD816L_01 NXP [NXP Semiconductors], BGD816L_01 Datasheet - Page 2

• Manufacturer Part Number: BGD816L_01
• Description: 860 MHz, 21.5 dB gain power doubler amplifier
• Manufacturer: NXP [NXP Semiconductors]

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
Hybrid amplifier module in a SOT115J package operating
with a voltage supply of 24 V (DC).
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
2001 Nov 15
G
I
V
V
T
T
tot
SYMBOL
SYMBOL
stg
mb
Excellent linearity
Extremely low noise
Excellent return loss properties
Silicon nitride passivation
Rugged construction
Gold metallization ensures excellent reliability.
CATV systems operating in the 40 to 870 MHz
frequency range.
B
i
860 MHz, 21.5 dB gain power doubler amplifier
p
power gain
total current consumption (DC)
supply voltage
RF input voltage
storage temperature
operating mounting base temperature
PARAMETER
PARAMETER
f = 45 MHz
f = 870 MHz
V
B
= 24 V
2
PINNING - SOT115J
handbook, halfpage
CONDITIONS
PIN
2, 3
7, 8
1
5
9
Side view
input
common
+V
common
output
Fig.1 Simplified outline.
B
1
2
3
21.2
22
345
40
20
MIN.
MIN.
5
DESCRIPTION
7
8
9
Product specification
21.8
23
375
30
70
+100
+100
MSA319
MAX.
MAX.
BGD816L
dB
dB
mA
V
dBmV
C
C
UNIT
UNIT