IS42S83200B ISSI [Integrated Silicon Solution, Inc], IS42S83200B Datasheet - Page 15

• Manufacturer Part Number: IS42S83200B
• Description: 32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM
• Manufacturer: ISSI [Integrated Silicon Solution, Inc]

DC RECOMMENDED OPERATING CONDITIONS
Symbol
IS42S83200B,
ABSOLUTE MAXIMUM RATINGS
Note:
1. V
2. V
3. All voltages are referenced to Vss.
CAPACITANCE CHARACTERISTICS
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to
2. All voltages are referenced to Vss.
Integrated Silicon Solution, Inc. — www.issi.com —
PRELIMINARY INFORMATION Rev. 00E
05/25/06
Symbol
V
V
V
V
P
I
T
T
Symbol
C
C
CI/O
the device. This is a stress rating only and functional operation of the device at these or any other condi-
tions above those indicated in the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect reliability.
CS
IH
IL
OUT
OPR
STG
DD MAX
DDQ MAX
IN
D MAX
IN1
IN2
V
V
V
(min) = -1.2V (
(max) = V
V
DDQ
IH
IL
DD
(2)
(1)
DDQ
Parameter
Input Capacitance: CLK
Input Capacitance:All other input pins
Data Input/Output Capacitance: DQS
Parameter
Supply Voltage
I/O Supply Voltage
Input High Voltage
Input Low Voltage
+1.2V (
PULSE WIDTH
Parameters
Maximum Supply Voltage
Maximum Supply Voltage for Output Buffer
Input Voltage
Output Voltage
Allowable Power Dissipation
Output Shorted Current
Operating Temperature
Storage Temperature
IS42S16160B
PULSE WIDTH
< 3
NS
).
< 3
NS
).
(1)
(At T
A
= 0 to +25°C, V
1-800-379-4774
Com.
Ind.
Min.
-1.2
3.0
3.0
2.0
Min.
2.5
2.5
4.0
–1.0 to V
–0.5 to V
Typ.
–0.5 to +4.6
–0.5 to +4.6
–65 to +150
3.3
3.3
—
—
–40 to +85
DD
0 to +70
Rating
= V
50
1
DDQ
DD
DDQ
+ 0.5
+ 0.5
V
= 3.3 ± 0.3V)
DDQ
Max.
+0.8
3.6
3.6
Max.
3.5
3.8
6.0
+ 1.2
Unit
mA
°C
°C
W
V
V
V
V
Unit
Unit
pF
pF
pF
ISSI
V
V
V
V
15
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