NAND02G-B2D NUMONYX [Numonyx B.V], NAND02G-B2D Datasheet - Page 52

• Manufacturer Part Number: NAND02G-B2D
• Description: 2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories
• Manufacturer: NUMONYX [Numonyx B.V]

DC and AC parameters
Table 26.
1. Leakage current and standby current double in stacked devices.
Table 27.
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Symbol
I
Symbol
t
t
t
t
t
t
t
OL
t
t
t
t
ALHWH
CLHWH
t
WHALH
WHCLH
t
t
WHCLL
ALLWH
CLLWH
WHWL
WHDX
WHEH
WLWH
DVWH
WLWL
V
ELWH
I
I
I
I
I
V
V
V
DD1
DD2
DD3
DD4
DD5
I
V
I
LKO
LO
OH
LI
OL
(RB)
IH
IL
symbol
t
t
t
t
Alt.
t
t
t
t
t
t
t
CLS
ALH
CLH
ALS
WH
WC
WP
DS
CS
DH
CH
DC characteristics (3 V devices)
V
AC characteristics for command, address, data input
DD
Standby current (CMOS)
Output leakage current
Operating
Output high voltage level
Standby current (TTL)
Output low voltage level
Output low current (RB)
Input leakage current
current
supply voltage (erase and
Input high voltage
Address Latch Low to Write Enable High
Address Latch High to Write Enable High
Command Latch High to Write Enable High
Command Latch Low to Write Enable High
Data Valid to Write Enable High
Chip Enable Low to Write Enable High
Write Enable High to Address Latch High
Write Enable High to Command Latch High
Write Enable High to Command Latch Low
Write Enable High to Data Transition
Write Enable High to Chip Enable High
Write Enable High to Write Enable Low
Write Enable Low to Write Enable High
Write Enable Low to Write Enable Low
Input low voltage
program lockout)
Parameter
Sequential
Program
Erase
read
(1)
(1)
(1)
(1)
Parameter
V
E=V
E=V
V
OUT
Test conditions
t
IN
I
RLRL
I
OH
E=V
= 0 to V
OL
V
WP=0/V
IL,
IH
= 0 to V
OL
, WP=0/V
= -400 µA
I
= 2.1 mA
OUT
minimum
= 0.4 V
DD
-
-
-
-
-
-0.2,
DD
= 0 mA
DD
DD
max
AL setup time
CL setup time
Data setup time
E setup time
AL hold time
CL hold time
Data hold time
E hold time
W high hold time
W pulse width
Write cycle time
max
DD
0.8 V
Min
-0.3
2.4
8
-
-
-
-
-
-
-
-
DD
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Typ
15
15
15
10
-
-
-
-
-
-
-
-
1.8 V
25
25
20
35
10
10
10
10
15
25
45
NAND02G-B2D
V
0.2 V
DD
Max
±10
±10
0.4
1.8
30
30
30
50
10
1
-
+0.3
3 V
12
12
12
20
10
12
25
DD
5
5
5
5
Unit
Unit
mA
mA
mA
mA
mA
µA
µA
µA
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
V
V
V
V
V