HYB3165165TL-50 SIEMENS [Siemens Semiconductor Group], HYB3165165TL-50 Datasheet - Page 11

• Manufacturer Part Number: HYB3165165TL-50
• Description: 4M x 16-Bit Dynamic RAM
• Manufacturer: SIEMENS [Siemens Semiconductor Group]

AC Characteristics
T
Parameter
OE pulse width
OE hold time from CAS high
WE pulse width to output disable at CAS
high
Output buffer turn-off delay from WE
Hyper Page Mode (EDO) Read-
modify-Write Cycle
Hyper page mode (EDO) read-write
cycle time
CAS precharge to WE
CAS before RAS refresh cycle
CAS setup time
CAS hold time
RAS to CAS precharge time
Write to RAS precharge time
Write hold time referenced to RAS
CAS-before-RAS counter test cycle
CAS precharge time (CAS-before-RAS
counter test cycle)
Self Refresh Cycle
RAS pulse width during self refresh
RAS precharge time during self refresh t
CAS hold time during self refresh
Semiconductor Group
A
= 0 to 70 ˚C,
V
CC
= 3.3 V
(cont’d)
0.3V , t
5)6)
T
= 2 ns
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
OEP
OEHC
WPZ
WPZ
PRWC
CPWD
CSR
CHR
RPC
WRP
WRH
CPT
RASS
RPS
CHS
41
min.
7
7
7
0
51
41
5
8
5
8
8
35
100k
84
-50
-50
max.
–
–
–
10
–
–
–
–
–
–
–
–
_
_
_
Limit Values
HYB3164(5)165T(L)-50/-60
min.
10
10
10
0
66
49
5
10
5
10
10
40
100k
104
-50
4M x 16 EDO-DRAM
-60
max.
–
–
–
10
–
–
–
–
–
–
–
–
_
_
_
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
17
17
17