HYB3165165TL-50 SIEMENS [Siemens Semiconductor Group], HYB3165165TL-50 Datasheet - Page 9

• Manufacturer Part Number: HYB3165165TL-50
• Description: 4M x 16-Bit Dynamic RAM
• Manufacturer: SIEMENS [Siemens Semiconductor Group]

AC Characteristics
T
Parameter
common parameters
Random read or write cycle time
RAS precharge time
RAS pulse width
CAS pulse width
Row address setup time
Row address hold time
Column address setup time
Column address hold time
RAS to CAS delay time
RAS to column address delay time
RAS hold time
CAS hold time
CAS to RAS precharge time
Transition time (rise and fall)
Refresh period for HYB3164165
Refresh period for HYB3165165
Read Cycle
Access time from RAS
Access time from CAS
Access time from column address
OE access time
Column address to RAS lead time
Read command setup time
Read command hold time
Read command hold time referenced to
RAS
CAS to output in low-Z
Semiconductor Group
A
= 0 to 70 ˚C,
V
CC
= 3.3 V
5)6)
0.3V , t
T
= 2 ns
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
RC
RP
RAS
CAS
ASR
RAH
ASC
CAH
RCD
RAD
RSH
CSH
CRP
T
REF
REF
RAC
CAC
AA
OEA
RAL
RCS
RCH
RRH
CLZ
39
min.
84
30
50
8
0
8
0
8
12
10
8
45
5
1
–
–
–
–
–
–
25
0
0
0
0
-50
max.
–
–
100k
10k
–
–
–
–
37
25
–
50
128
64
50
13
25
13
–
–
–
–
–
Limit Values
HYB3164(5)165T(L)-50/-60
min.
104
40
60
10
0
10
0
10
14
12
10
50
5
1
–
–
–
–
–
–
30
0
0
0
0
4M x 16 EDO-DRAM
-60
max.
–
–
100k
10k
–
–
–
–
45
30
–
–
–
50
128
64
60
15
30
15
–
–
–
–
–
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
7
8, 9
8, 9
8,10
11
11
8