HT6256DB HONEYWELL [Honeywell Solid State Electronics Center], HT6256DB Datasheet

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HT6256DB

Manufacturer Part Number
HT6256DB
Description
HIGH TEMPERATURE 32K x 8 STATIC RAM
Manufacturer
HONEYWELL [Honeywell Solid State Electronics Center]
Datasheet
HIGH TEMPERATURE 32K x 8 STATIC RAM
FEATURES
HTMOS
• Specified Over -55 to +225 C
• Fabricated with HTMOS™ IV Silicon on Insulator (SOI)
• Read/Write Cycle Times 50 ns Support 20 MHz Clock
• Asynchronous Operation
• CMOS Input/Output Buffers
• Single 5 V
• Hermetic 28-Lead Ceramic DIP
GENERAL DESCRIPTION
The 32K x 8 High Temperature Static RAM is a high
performance 32,768 word x 8-bit static random access
memory with industry-standard functionality. It is fabri-
cated with Honeywell’s HTMOS™ technology, and is
designed for use in systems operating in severe high
temperature environments.
The RAM requires only a single 5 V
and has CMOS compatible I/O. Power consumption is
typically less than 30 mW/MHz in operation, and less than
10 mW when de-selected. The RAM read operation is fully
asynchronous, with an associated typical access time of
50 ns at 5 V.
The RAM provides guaranteed performance over the full
-55 to +225 C temperature range. Typically, parts will
operate up to +300 C for a year, with derated perfor-
mance. All parts are burned in at 250 C to eliminate infant
mortality.
Solid State Electronics Center • 12001 State Highway 55, Plymouth, MN 55441 • (800) 323-8295 • http://www.ssec.honeywell.com
TM
High Temperature Products
10% Power Supply
10% power supply
APPLICATONS
• Down-Hole Oil Well
• Avionics
• Turbine Engine Control
• Industrial Process Control
• Nuclear Reactor
• Electric Power Conversion
• Heavy Duty Internal Combustion Engines
DQ0
DQ1
DQ2
VSS
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
PACKAGE PINOUT
1
2
3
4
5
6
7
8
9
10
11
12
13
14
View
Top
28
27
26
25
24
23
22
21
20
19
18
17
16
15
HT6256
VDD
NWE
A13
A8
A9
A11
NOE
A10
NCS
DQ7
DQ6
DQ5
DQ4
DQ3

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HT6256DB Summary of contents

Page 1

... GENERAL DESCRIPTION The 32K x 8 High Temperature Static RAM is a high performance 32,768 word x 8-bit static random access memory with industry-standard functionality fabri- cated with Honeywell’s HTMOS™ technology, and is designed for use in systems operating in severe high temperature environments. ...

Page 2

... NOE A:9-11 SIGNAL DEFINITIONS A: 0-14 Address input pins which select a particular eight-bit word within the memory array. DQ: 0-7 Bidirectional data pins which serve as data outputs during a read operation and as data inputs during a write operation. NCS Negative chip select, when at a low level allows normal read or write operation. When at a high level NCS forces the SRAM to a precharge condition, holds the data output drivers in a high impedance state and disables all input buffers ...

Page 3

ABSOLUTE MAXIMUM RATINGS (1) Symbol VDD Supply Voltage Range (2) VPIN Voltage on Any Pin (2) TSTORE Storage Temperature (Zero Bias) TSOLDER Soldering Temperature (5 Seconds) PD Maximum Power Dissipation (3) IOUT DC or Average Output Current VPROT ESD Input ...

Page 4

HT6256 DC ELECTRICAL CHARACTERISTICS ...

Page 5

READ CYCLE AC TIMING CHARACTERISTICS (1) Symbol Parameter TAVAVR Address Read Cycle Time TAVQV Address Access Time TAXQX Address Change to Output Invalid Time TSLQV Chip Select Access Time TSLQX Chip Select Output Enable Time TSHQZ Chip Select Output Disable ...

Page 6

HT6256 WRITE CYCLE AC TIMING CHARACTERISTICS ( ...

Page 7

DYNAMIC ELECTRICAL CHARACTERISTICS Read Cycle The RAM is asynchronous in operation, allowing the read cycle to be controlled by address, chip select (NCS), or chip enable (CE) (refer to Read Cycle timing diagram). To per- form a valid read operation, ...

Page 8

HT6256 QUALITY ASSURANCE Honeywell maintains a high level of product integrity through process control utilizing statistical process control, a com- plete “Total Quality Assurance System,” and a computer data base process performance tracking system. This Total Quality approach ensures our ...

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