E28F004BX-B120 INTEL [Intel Corporation], E28F004BX-B120 Datasheet - Page 49

• Manufacturer Part Number: E28F004BX-B120
• Description: 4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY
• Manufacturer: INTEL [Intel Corporation]

EXTENDED TEMPERATURE OPERATION
AC CHARACTERISTICS CE -CONTROLLED WRITE OPERATIONS
NOTES
10 See Standard Test Configuration
ORDERING INFORMATION
1 Chip-Enable Controlled Writes Write operations are driven by the valid combination of CE
2 3 4 5 6 7 8 Refer to AC Characteristics for WE -Controlled Write Operations
9 Read timing characteristics during write and erase operations are the same as during read-only operations Refer to AC
VALID COMBINATIONS
E28F400BX-T60
E28F400BX-B60
E28F400BX-T80
E28F400BX-B80
E28F400BX-T120
E28F400BX-B120
VALID COMBINATIONS
E28F004BX-T60
E28F004BX-B60
t
t
t
t
t
t
EHQV2
EHQV3
EHQV4
QVVL
QVPH
PHBR
CE
should be measured relative to the CE
Characteristics during Read Mode
Symbol
defines the write pulse-width (within a longer WE
t
t
t
t
VPH
PHH
IR
IF
Duration of Erase Operation (Boot)
Duration of Erase Operation (Parameter)
Duration of Erase Operation (Main)
V
RP
Boot-Block Relock Delay
Input Rise Time
Input Fall Time
PA28F400BX-T60
PA28F400BX-B60
PA28F400BX-T80
PA28F400BX-B80
PA28F400BX-T120
PA28F400BX-B120
E28F004BX-T80
E28F004BX-B80
PP
Hold from Valid SRD
V
HH
Versions
Hold from Valid SRD
Parameter
waveform
TE28F004BX-T80
TE28F004BX-B80
TE28F400BX-T80
TE28F400BX-B80
timing waveform) all set-up hold and inactive WE
E28F004BX-T120
E28F004BX-B120
TB28F400BX-T80
TB28F400BX-B80
Notes
2 5 6
2 5
2 5
5 8
6 8
7
28F400BX-T B 28F004BX-T B
T28F400BX-80
T28F004BX-80
Min
0 4
0 4
0 7
0
0
and WE
(1 9)
Max
100
(10)
(10)
10
10
in systems where
290451 –18
(Continued)
290451 –30
Unit
ns
ns
ns
ns
ns
times
s
s
s
49