SI9934BDY_06 VISHAY [Vishay Siliconix], SI9934BDY_06 Datasheet
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SI9934BDY_06
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SI9934BDY_06 Summary of contents
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Dual P-Channel 2.5-V (G-S) MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS DESCRIPTION The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. model is extracted and optimized over ...
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SPICE Device Model Si9934BDY Vishay Siliconix SPECIFICATIONS (T = 25°C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source ...
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COMPARISON OF MODEL WITH MEASURED DATA (T Document Number: 73465 S-60409Rev. B, 20-Mar-06 SPICE Device Model Si9934BDY Vishay Siliconix =25°C UNLESS OTHERWISE NOTED) J www.vishay.com 3 ...
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All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...