SI9934BDY_06 VISHAY [Vishay Siliconix], SI9934BDY_06 Datasheet - Page 2

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SI9934BDY_06

Manufacturer Part Number
SI9934BDY_06
Description
Dual P-Channel 2.5-V (G-S) MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
SPICE Device Model Si9934BDY
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
2
Vishay Siliconix
www.vishay.com
SPECIFICATIONS (T
Static
Gate Threshold Voltage
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
b
Parameter
a
a
a
J
= 25°C UNLESS OTHERWISE NOTED)
a
Symbol
V
r
I
t
t
DS(on)
V
Q
Q
D(on)
GS(th)
Q
d(on)
d(off)
g
t
t
SD
fs
gs
gd
r
f
g
V
DS
I
D
≅ −1 A, V
= −6 V, V
V
V
V
V
V
DS
GS
GS
I
DS
V
DS
Test Condition
S
DD
= −1.7 A, V
= −5 V, V
= −4.5 V, I
= −2.5 V, I
= −10 V, I
= V
= −6 V, R
GEN
GS
GS
, I
= −4.5 V, I
= −4.5 V, R
D
GS
= −250 µA
D
D
D
GS
L
= −6.4 A
= −4.5 V
= −6.4 A
= −1.8 A
= 6 Ω
= 0 V
D
G
= −6.4 A
= 6 Ω
Simulated
Data
0.027
0.043
−0.80
11.4
1.2
2.6
85
17
46
28
70
21
4
Measured
S-60409Rev. B, 20-Mar-06
Data
0.028
0.044
−0.80
Document Number: 73465
2.6
17
13
35
35
80
50
4
Unit
nC
ns
V
A
S
V

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