VND5050J-E13TR STMICROELECTRONICS [STMicroelectronics], VND5050J-E13TR Datasheet - Page 16

• Manufacturer Part Number: VND5050J-E13TR
• Description: Double channel high side driver with analog current sense for automotive applications
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

Application information
3
Figure 28. Application schematic
3.1
3.1.1
16/28
Note: Channel 2 has the same internal circuit as channel 1.
+5V
µC
Application information
GND protection network against reverse battery
Solution 1:
Resistor in the ground line (R
The following is an indication on how to dimension the R
1.
2.
where -I
maximum rating section of the device datasheet.
Power Dissipation in R
P
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where I
maximum on-state currents of the different devices.
Please note that if the microprocessor ground is not shared by the device ground then the
R
values. This shift will vary depending on how many devices are ON in the case of several
high side drivers sharing the same R
D
GND
= (-V
R
R
will produce a shift (I
GND
GND
CC
GND
R
R
R
)
prot
prot
prot
≤ 600mV / (I
≥ (−V
2
/R
is the DC reverse ground pin current and can be found in the absolute
GND
CC
+5V
) / (-I
GND
STATUS
S(on)max
GND
STAT_DIS
S(on)max
(when V
INPUT
)
GND
).
only). This can be used with any type of load.
* R
CC
GND
<0: during reverse battery situations) is:
GND
V
.
GND
) in the input thresholds and the status output
GND
R
GND
V
GND
CC
S(on)max
D
GND
resistor.
VND5050J-E / VND5050K-E
OUTPUT
becomes the sum of the
D
ld