MC908QL4 FREESCALE [Freescale Semiconductor, Inc], MC908QL4 Datasheet - Page 36

• Manufacturer Part Number: MC908QL4
• Description: M68HC08 Microcontrollers
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

Memory
2.6.2 FLASH Page Erase Operation
Use the following procedure to erase a page of FLASH memory. A page consists of 64 consecutive bytes
starting from addresses $XX00, $XX40, $XX80, or $XXC0. The 48-byte user interrupt vectors area also
forms a page. Any FLASH memory page can be erased alone.
A page erase of the vector page will erase the internal oscillator trim value at $FFC0.
36
10. After time, t
1. Set the ERASE bit and clear the MASS bit in the FLASH control register.
2. Read the FLASH block protect register.
3. Write any data to any FLASH location within the address range of the block to be erased.
4. Wait for a time, t
5. Set the HVEN bit.
6. Wait for a time, t
7. Clear the ERASE bit.
8. Wait for a time, t
9. Clear the HVEN bit.
The COP register at location $FFFF should not be written between steps
5-9, when the HVEN bit is set. Since this register is located at a valid
FLASH address, unpredictable behavior may occur if this location is written
while HVEN is set.
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order as shown, other unrelated operations may
occur between the steps.
RCV
, the memory can be accessed in read mode again.
NVS
Erase
NVH
.
.
.
MC68HC908QL4 Data Sheet, Rev. 7
CAUTION
NOTE
NOTE
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