2SK3302_06 TOSHIBA [Toshiba Semiconductor], 2SK3302_06 Datasheet

2SK3302_06

Manufacturer Part Number

2SK3302_06

Description

Silicon N Channel MOS Type Switching Regulator and DC-DC Converter Applications

Manufacturer

TOSHIBA [Toshiba Semiconductor]

Datasheet

1.2SK3302_06.pdf (6 pages)

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Switching Regulator and DC-DC Converter Applications

•

Absolute Maximum Ratings

Thermal Characteristics

Drain-source voltage

Drain-gate voltage (R

Gate-source voltage

Drain current

Drain power dissipation

Single pulse avalanche energy

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

Storage temperature range

Note:

Thermal resistance, channel to ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: V

Note 3: Repetitive rating: pulse width limited by maximum channel temperature.

This transistor is an electrostatic-sensitive device. Please handle with caution.

Low drain-source ON resistance: R

High forward transfer admittance: |Y

Low leakage current: I

Enhancement model: V

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristics

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)

= 90 V, T

Characteristics

Pulse

= 20 kΩ)

DSS

= 25°C, L = 100 mH, R

(Note 1)

(Note 2)

= 2.0~4.0 V (V

= 100 μA (max) (V

(Ta = 25°C)

DS (ON)

Symbol

DGR

GSS

DSS

stg

2SK3302

| = 0.4 S (typ.)

= 11.5 Ω (typ.)

= 10 V, I

Symbol

th (ch-a)

= 25 Ω, I

= 500 V)

−55~150

Rating

14.3

0.13

500

±30

150

0.5

1.5

1.3

0.5

= 1 mA)

Max

96.1

= 0.5 A

°C/W

Unit

°C

Weight: 1.9 g (typ.)

JEDEC

JEITA

TOSHIBA

2-8MIB

2006-11-06

―

2SK3302

Unit: mm

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2SK3302_06 Summary of contents

Page 1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) Switching Regulator and DC-DC Converter Applications • Low drain-source ON resistance: R • High forward transfer admittance: |Y • Low leakage current 100 μA (max) (V DSS • ...

Page 2

Electrical Characteristics Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF ...

Page 3

I – 0.5 10 Common source 5 25°C 6 0.4 Pulse test 8 0.3 0 Drain-source voltage V DS (V) I – V ...

Page 4

R – (ON) 40 Common source Pulse test 0 0 −80 − 120 Ambient temperature Ta (°C) Capacitance – ...

Page 5

Duty = 0.5 0.5 0.3 0.2 0.1 0.1 0.05 0.05 0.02 0.03 0.01 0.01 0.005 0.003 0.001 100 μ Safe operating area max (pulsed max (continuous ...

Page 6

RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...

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